IRF7309TRPBF - Dual N/P MOSFET Array 30V 4A/3A SO-8 | Infineon
MPN: IRF7309TRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.97 | $0.97 |
| 10 | $0.85 | $8.50 |
| 100 | $0.71 | $71.00 |
| 500 | $0.58 | $290.00 |
| 1,000 | $0.46 | $460.00 |
| 3,000 | $0.35 | $1,050.00 |
Drop-in alternatives for IRF7309TRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRF7309PBF
β Drop-Inπ Reference alternative (not in catalog)
IRF7313TRPBF
β Drop-Inβ In Stock
$0.27 / Unit
View Datasheet βIRF7309TRPBF-1
β Drop-Inπ Reference alternative (not in catalog)
IRFR9024NTRPBF
β Drop-Inβ In Stock
$0.17 / Unit
View Datasheet βNTMD6N02R2G
β Drop-Inπ Reference alternative (not in catalog)
IRF7309TRPBF Maximum Ratings & Electrical Characteristics
| Configuration | Dual N-Channel + P-Channel (Complementary) |
| Polarity | N+P |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (N-channel, TA=25C) | 4 A |
| Continuous Drain Current (P-channel, TA=25C) | 3 A |
| On-Resistance (N-channel, max) | 50 mOhm |
| Power Dissipation (TA=25C) | 1.4 W |
| Technology | IR HEXFET Generation V |
| Operating Temperature Range | -55C to +150C (TJ) |
| Package | 8-SO (SOIC-8) |
| Mounting Type | Surface Mount |
| MSL Level | MSL-1 (unlimited floor life per JEDEC J-STD-020) |
| Lead-Free Status | Yes (TRPBF suffix = Pb-free) |
| RoHS Status | Compliant |
| Packaging | Tape & Reel |
IRF7309TRPBF Pin Configuration
| Pin 1 | G1 (N-ch Gate) β Gate of N-channel MOSFET |
| Pin 2 | D1 (N-ch Drain) β Drain of N-channel MOSFET |
| Pin 3 | S1 (N-ch Source) β Source of N-channel MOSFET |
| Pin 4 | S1 (N-ch Source) β Source of N-channel MOSFET (tied to thermal pad) |
| Pin 5 | D2 (P-ch Drain) β Drain of P-channel MOSFET |
| Pin 6 | D2 (P-ch Drain) β Drain of P-channel MOSFET |
| Pin 7 | S2 (P-ch Source) β Source of P-channel MOSFET |
| Pin 8 | G2 (P-ch Gate) β Gate of P-channel MOSFET |
Safe Operating Area (N-channel, TA=25C, TC=25C)
Typical Applications
IRF7309TRPBF is suitable for 6 applications: Synchronous Buck DC-DC Converter, H-Bridge Motor Driver (Low Power), Battery Protection / Load Switch, Class-D Audio Output Stage, USB Load Switch / Power Mux, Industrial Sensor / Solenoid Driver.
Synchronous Buck DC-DC Converter
The IRF7309TRPBF's complementary N+P architecture maps directly onto a synchronous buck converter: the P-channel serves as the high-side switch (driven low to turn on) and the N-channel as the low-side synchronous rectifier. With 30V VDS headroom the part comfortably handles 12V input rails, and 4A/3A continuous ratings suit point-of-load converters up to ~15W output. According to the Infineon datasheet, the Generation V HEXFET process delivers low on-resistance per silicon area, keeping conduction loss minimal at sub-2A loads. The integrated SO-8 footprint cuts the high-side/low-side loop inductance versus two discrete SO-8 parts, reducing ringing and improving EMI. Use a gate driver such as the IR2104 to switch the N-channel efficiently and tie the P-channel gate directly to a logic-level PWM output.
Recommended
H-Bridge Motor Driver (Low Power)
For sub-1A brushed DC motor or small stepper applications, the IRF7309TRPBF forms a compact half-bridge when paired with a second copy of itself - yielding a full H-bridge in two SO-8 packages. The complementary N/P arrangement simplifies gate drive because each half-bridge can be controlled with complementary PWM signals without a bootstrap capacitor. According to Infineon, the 30V VDS rating supports motor supplies up to 24V with margin for inductive flyback. The 1.4W dissipation limit and shared thermal pad require careful PCB copper sizing if continuous operation is expected; otherwise the small SO-8 footprint restricts sustained torque. Best suited for toys, valve actuators, and small pumps under 5W mechanical output.
Recommended
Battery Protection / Load Switch
The IRF7309TRPBF's P-channel MOSFET half is ideal for reverse-battery and over-discharge protection in single-cell Li-ion or multi-cell NiMH packs. The 30V VDS gives ample margin for 3S Li-ion (12.6V max) packs, and the 3A continuous rating covers most portable device load currents. According to the Infineon datasheet, the P-channel's source-to-drain body diode conducts during reverse polarity events, protecting downstream circuitry. Pair with a protection IC such as the BQ29700DSER for accurate cell-level cutoff. The N-channel half can be used for a low-side discharge FET or as a redundant protection path, sharing the same thermal pad for compact protection boards in wearable and IoT devices.
Recommended
Class-D Audio Output Stage
In sub-10W Class-D audio amplifier output stages, the IRF7309TRPBF provides a complementary N/P totem-pole per rail, enabling a fully differential half-bridge with minimal dead-time. The Generation V HEXFET process yields low on-resistance per silicon area, reducing conduction loss and improving amplifier efficiency. According to Infineon, the fast switching speed supports PWM carrier frequencies above 250 kHz, allowing output filter inductors to shrink. The shared SO-8 thermal pad aids thermal coupling between the two MOSFETs, keeping the half-bridge thermally balanced. Suitable for portable speakers, headphone amplifiers, and small subwoofer plate amps where SO-8 footprint is preferred over larger DPAK packages.
Recommended
USB Load Switch / Power Mux
For USB Type-C power muxing and load-disconnect functions in 5V/3A subsystems, the IRF7309TRPBF's P-channel half serves as the high-side switch with reverse-current blocking, while the N-channel half can control a secondary supply path or indicator LED driver. The 30V VDS easily tolerates USB-PD voltage spikes and hot-plug transients. According to the Infineon datasheet, the P-channel's low gate charge enables fast turn-off for inrush limiting. Place a 10k gate pull-up on the P-channel for default-off behavior, and drive the gate low via an open-drain GPIO from a power mux controller such as the FUSB302. The compact SO-8 fits easily inside Type-C connector shrouds.
Recommended
Industrial Sensor / Solenoid Driver
The IRF7309TRPBF drives inductive loads such as 24V solenoids, small relays, and valve coils in industrial PLC and sensor-interface modules. The N-channel handles the low-side switching for ground-referenced loads, while the P-channel provides high-side switching for systems where ground-referenced switching is impractical. According to Infineon, the 30V VDS rating tolerates 24V industrial rails with margin for flyback transients when paired with a TVS or freewheeling diode. The wide -55C to +150C junction temperature range suits outdoor and factory-floor environments. The complementary architecture simplifies hardware design for bidirectional actuator control in process automation.
Recommended
Recommended Products Summary
Engineering reference data for IRF7309TRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF7309PBF | IRF7313TRPBF | IRF7309TRPBF-1 | IRFR9024NTRPBF | NTMD6N02R2G |
|---|---|---|---|---|---|---|
| Package | SO-8 (SOIC-8) | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| Configuration | Dual N+P | Dual N+P | Dual N+P | Dual N+P | Single P-channel | Dual N-channel |
| VDS (max) | 30 V | 30 V | 30 V | 30 V | 55 V | 20 V |
| Continuous Drain Current (N-ch) | 4 A | 4 A | 6 A | 4 A | N/A (P-only) | 6.6 A |
| Continuous Drain Current (P-ch) | 3 A | 3 A | 5 A | 3 A | 3.4 A | N/A (N-only) |
| RDS(on) N-channel (max) | 50 mOhm | 50 mOhm | 30 mOhm | 50 mOhm | N/A | 30 mOhm |
| Power Dissipation (TA=25C) | 1.4 W | 1.4 W | 2.0 W | 1.4 W | 2.0 W | 1.69 W |
Key Differentiators
- Lower RDS(on) for same footprint and pinout (vs IRF7313TRPBF)
- Same die with automotive qualification (-1 suffix) (vs IRF7309TRPBF-1)
- Dual complementary topology in one SO-8 (vs NTMD6N02R2G (onsemi))
Design Notes
The IRF7309TRPBF's 1.4W power dissipation rating assumes TA=25C with the SO-8 thermal pad soldered to a minimum 1 square inch of 2oz copper on a JEDEC standard test board. Estimated: at TA=25C, 50 mOhm RDS(on), and 2A continuous current, each MOSFET dissipates P = I^2 * RDS(on) = 4 * 0.05 = 0.2W per device (0.4W combined for both channels). With SO-8 theta_JA approximately 50 C/W on minimum pad, junction rise is 50 * 0.4 = 20C, well within the 150C limit. For continuous operation above 1.5A per channel, increase copper pour to 2+ square inches and consider thermal vias to inner planes.
Use a single contiguous copper pour under the SO-8 body tied to the appropriate source pin (pin 4 for N-channel source, pin 7 for P-channel source, depending on circuit topology). Per Infineon's SO-8 Power MOSFET layout guidelines, place gate-drive traces directly over the gate pin with minimal length to limit ringing; use a 10-100 Ohm gate-source resistor to dampen high-frequency oscillations. Keep the switching node (P-channel drain or N-channel drain) short and away from sensitive analog traces to reduce EMI.
Do not exceed VGS = +/-20V (absolute max). Driving the P-channel gate above the source by more than 20V destroys the gate oxide - use a gate clamp Zener or driver IC if the upstream supply can exceed 20V. The body diode of the P-channel MOSFET has limited reverse recovery; do not rely on it for high-frequency rectification. Finally, verify pinout against the Infineon datasheet before substituting - the IRF7309 is NOT pin-compatible with the dual-N-channel IRF7306 despite the similar part number.
For half-bridge layouts, minimize the high-side P-channel drain-to-low-side N-channel drain switching loop by placing both MOSFETs adjacent and routing the switching node on the top layer only. Add a low-ESR ceramic bypass capacitor (10uF X7R) directly across the supply rails adjacent to the IRF7309TRPBF to suppress switching transients. According to Infineon's application note on SO-8 dual MOSFETs, the shared thermal pad benefits from 4-8 thermal vias (0.3mm drill) to an inner ground plane for improved heat spreading.
Compliance Information
TRPBF suffix indicates lead-free (Pb-free) per Infineon lead-free mandate. RoHS compliant. Not AEC-Q100 qualified in standard -1 variant; choose IRF7309TRPBF-1 for automotive-grade.
