IRF8736TRPBF vs IRF7309TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF8736TRPBF disebabkan oleh Infineon dan IRF7309TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF8736TRPBF IRF7309TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology StrongIRFET / HEXFET IR HEXFET Generation V
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TA=25C 18 A —
Power Dissipation (PD) Max at TA=25C 2.5 W —
Drain-Source On-Resistance (RDS(on)) Max 4.8 mOhm at VGS = 10V —
Gate Charge (Qg) Typical 17 nC —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Kemasan SO-8 (8-SO, MS-012AA) 8-SO (SOIC-8)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction) -55C to +150C (TJ)
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) —
Aras MSL 1 (per JEDEC J-STD-020) MSL-1 (unlimited floor life per JEDEC J-STD-020)
Avalanche Rated Yes (fully characterized avalanche voltage) —
Configuration Single Dual N-Channel + P-Channel (Complementary)
Packaging Tape & Reel (TRPBF suffix) Tape & Reel
Polarity — N+P
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (N-channel, TA=25C) — 4 A
Continuous Drain Current (P-channel, TA=25C) — 3 A
On-Resistance (N-channel, max) — 50 mOhm
On-Resistance (P-channel, max) — [DATA_NEEDED: RDS(on) P-channel value]
Power Dissipation (TA=25C) — 1.4 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Lead-Free Status — Yes (TRPBF suffix = Pb-free)
Status RoHS — Compliant

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