IRF9530NSTRLPBF vs IRF9540NSTRLPBF Comparison
Detailed side-by-side comparison of IRF9530NSTRLPBF by Infineon and IRF9540NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF9530NSTRLPBF | IRF9540NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.58 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TC=25C | -14 A | — |
| On-Resistance RDS(on) max @ VGS=-10V | 200 mOhm | — |
| Total Gate Charge (Qg) | 38.7 nC (typ) | 64.7 nC |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) range] | — |
| Power Dissition (PD) at TC=25C | 79 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Thermal Resistance Theta_JC | 1.5 C/W (typ) | — |
| Operating Temperature Range | -55C to +150C (TJ) | — |
| Package | D2PAK (TO-263-3) | D2PAK (TO-263), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (Pb-free suffix) | — |
| Technology | HEXFET (Planar DMOS) | HEXFET, Advanced Process |
| Avalanche Rated | [DATA_NEEDED: EAS rating] | Yes |
| Manufacturer | — | Infineon (formerly International Rectifier) |
| Product Type | — | Single P-Channel Power MOSFET (HEXFET) |
| Drain-Source Voltage (Vdss) | — | -100 V |
| Continuous Drain Current (Id) | — | -23 A (at Tc) |
| On-Resistance (Rds(on)) | — | 117 mOhm max |
| Power Dissipation (Ta) | — | 3.1 W |
| Power Dissipation (Tc) | — | 110 W |
| Operating Mode | — | Enhancement-mode |
| Lead Finish | — | Pb-free, RoHS-compliant |
| Shipping Media | — | Tape and Reel (TR suffix) |