IRF9530NSTRLPBF vs IRF9540NSTRLPBF Сравнение
Подробное сравнение бок о бок IRF9530NSTRLPBF от Infineon и IRF9540NSTRLPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRF9530NSTRLPBF | IRF9540NSTRLPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,65 | $0,58 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TC=25C | -14 A | — |
| On-Resistance RDS(on) max @ VGS=-10V | 200 mOhm | — |
| Total Gate Charge (Qg) | 38.7 nC (typ) | 64.7 nC |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) range] | — |
| Power Dissition (PD) at TC=25C | 79 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Thermal Resistance Theta_JC | 1.5 C/W (typ) | — |
| Диапазон рабочих температур | -55C to +150C (TJ) | — |
| Корпус | D2PAK (TO-263-3) | D2PAK (TO-263), surface mount |
| Тип монтажа | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (Pb-free suffix) | — |
| Technology | HEXFET (Planar DMOS) | HEXFET, Advanced Process |
| Avalanche Rated | [DATA_NEEDED: EAS rating] | Yes |
| Manufacturer | — | Infineon (formerly International Rectifier) |
| Product Type | — | Single P-Channel Power MOSFET (HEXFET) |
| Drain-Source Voltage (Vdss) | — | -100 V |
| Continuous Drain Current (Id) | — | -23 A (at Tc) |
| On-Resistance (Rds(on)) | — | 117 mOhm max |
| Power Dissipation (Ta) | — | 3.1 W |
| Power Dissipation (Tc) | — | 110 W |
| Operating Mode | — | Enhancement-mode |
| Lead Finish | — | Pb-free, RoHS-compliant |
| Shipping Media | — | Tape and Reel (TR suffix) |