IRF9Z34NPBF vs IRF9Z34NSTRRPBF Comparison

Detailed side-by-side comparison of IRF9Z34NPBF by Infineon and IRF9Z34NSTRRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF9Z34NPBF IRF9Z34NSTRRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Obsolete
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $1.55
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Polarity / Channel Type P-Channel —
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) at Tc=25C -19 A -19 A
Pulsed Drain Current (Idm) -72 A —
Power Dissipation (Pd) at Tc=25C 68 W —
On-Resistance Rds(on) at Vgs=-10V 100 milliohm (typical) —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical/min/max] -2 V to -4 V
Gate Charge (Qg) 23.3 nC (per Mouser listing) —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Operating Temperature Range -55C to +175C (junction) —
Package TO-220AB (through-hole, 3-pin) —
Mounting Type Through Hole Surface Mount
Pinout (G-D-S) Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source —
Technology HEXFET (5th generation) —
Lead-Free / Halogen-Free Yes (PBF suffix) —
RoHS Status Compliant Compliant (Pb-free suffix PBF)
Part Number — IRF9Z34NSTRRPBF
Transistor Type — P-Channel MOSFET (HexFET)
Drain-to-Source Voltage (Vdss) — -55 V
Power Dissipation (Pd) — 68 W (Tc)
Power Dissipation (Ta) — 3.8 W
Thermal Resistance, Junction-to-Case (RthJC) — 2.2 K/W (max)
Maximum Junction Temperature — 175 °C
Package / Case — D2PAK (TO-263-3), 3-pin (2 + Tab)
Operating Frequency — Optimized for switching below 100 kHz
Avalanche Rated — Yes (fully avalanche rated)
Packaging — Tape & Reel (STR suffix)

Datasheets & Resources

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