IRF9Z34NPBF vs IRF9Z34NSTRRPBF Vergleich

Detaillierter Direktvergleich von IRF9Z34NPBF von Infineon und IRF9Z34NSTRRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF9Z34NPBF IRF9Z34NSTRRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Obsolete
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,65 $1,55
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Polarity / Channel Type P-Channel —
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) at Tc=25C -19 A -19 A
Pulsed Drain Current (Idm) -72 A —
Power Dissipation (Pd) at Tc=25C 68 W —
On-Resistance Rds(on) at Vgs=-10V 100 milliohm (typical) —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical/min/max] -2 V to -4 V
Gate Charge (Qg) 23.3 nC (per Mouser listing) —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Betriebstemperaturbereich -55C to +175C (junction) —
Gehäuse TO-220AB (through-hole, 3-pin) —
Montageart Through Hole Surface Mount
Pinout (G-D-S) Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source —
Technology HEXFET (5th generation) —
Lead-Free / Halogen-Free Yes (PBF suffix) —
RoHS-Status Compliant Compliant (Pb-free suffix PBF)
Part Number — IRF9Z34NSTRRPBF
Transistortyp — P-Channel MOSFET (HexFET)
Drain-to-Source Voltage (Vdss) — -55 V
Power Dissipation (Pd) — 68 W (Tc)
Power Dissipation (Ta) — 3.8 W
Thermal Resistance, Junction-to-Case (RthJC) — 2.2 K/W (max)
Maximum Junction Temperature — 175 °C
Gehäuse / Bauform — D2PAK (TO-263-3), 3-pin (2 + Tab)
Operating Frequency — Optimized for switching below 100 kHz
Avalanche Rated — Yes (fully avalanche rated)
Packaging — Tape & Reel (STR suffix)

Datenblätter & Ressourcen

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