IRF9Z34NPBF vs IRF9Z34NSTRRPBF 비교
다음의 상세 나란히 비교: IRF9Z34NPBF 제조: Infineon 및 IRF9Z34NSTRRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF9Z34NPBF | IRF9Z34NSTRRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | Obsolete |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.65 | $1.55 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (Vds) | -55 V | — |
| Continuous Drain Current (Id) at Tc=25C | -19 A | -19 A |
| Pulsed Drain Current (Idm) | -72 A | — |
| Power Dissipation (Pd) at Tc=25C | 68 W | — |
| On-Resistance Rds(on) at Vgs=-10V | 100 milliohm (typical) | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical/min/max] | -2 V to -4 V |
| Gate Charge (Qg) | 23.3 nC (per Mouser listing) | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| 동작 온도 범위 | -55C to +175C (junction) | — |
| 패키지 | TO-220AB (through-hole, 3-pin) | — |
| 실장 유형 | Through Hole | Surface Mount |
| Pinout (G-D-S) | Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source | — |
| Technology | HEXFET (5th generation) | — |
| Lead-Free / Halogen-Free | Yes (PBF suffix) | — |
| RoHS 상태 | Compliant | Compliant (Pb-free suffix PBF) |
| Part Number | — | IRF9Z34NSTRRPBF |
| 트랜지스터 유형 | — | P-Channel MOSFET (HexFET) |
| Drain-to-Source Voltage (Vdss) | — | -55 V |
| Power Dissipation (Pd) | — | 68 W (Tc) |
| Power Dissipation (Ta) | — | 3.8 W |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 2.2 K/W (max) |
| Maximum Junction Temperature | — | 175 °C |
| 패키지 / 케이스 | — | D2PAK (TO-263-3), 3-pin (2 + Tab) |
| Operating Frequency | — | Optimized for switching below 100 kHz |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| Packaging | — | Tape & Reel (STR suffix) |