IRF9Z34NPBF vs IRF9Z34NSTRRPBF 比較
詳細な並列比較: IRF9Z34NPBF メーカー: Infineon および IRF9Z34NSTRRPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRF9Z34NPBF | IRF9Z34NSTRRPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | Obsolete |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.65 | $1.55 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (Vds) | -55 V | — |
| Continuous Drain Current (Id) at Tc=25C | -19 A | -19 A |
| Pulsed Drain Current (Idm) | -72 A | — |
| Power Dissipation (Pd) at Tc=25C | 68 W | — |
| On-Resistance Rds(on) at Vgs=-10V | 100 milliohm (typical) | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical/min/max] | -2 V to -4 V |
| Gate Charge (Qg) | 23.3 nC (per Mouser listing) | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| 動作温度範囲 | -55C to +175C (junction) | — |
| パッケージ | TO-220AB (through-hole, 3-pin) | — |
| 実装タイプ | Through Hole | Surface Mount |
| Pinout (G-D-S) | Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source | — |
| Technology | HEXFET (5th generation) | — |
| Lead-Free / Halogen-Free | Yes (PBF suffix) | — |
| RoHS ステータス | Compliant | Compliant (Pb-free suffix PBF) |
| Part Number | — | IRF9Z34NSTRRPBF |
| トランジスタタイプ | — | P-Channel MOSFET (HexFET) |
| Drain-to-Source Voltage (Vdss) | — | -55 V |
| Power Dissipation (Pd) | — | 68 W (Tc) |
| Power Dissipation (Ta) | — | 3.8 W |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 2.2 K/W (max) |
| Maximum Junction Temperature | — | 175 °C |
| パッケージ / ケース | — | D2PAK (TO-263-3), 3-pin (2 + Tab) |
| Operating Frequency | — | Optimized for switching below 100 kHz |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| Packaging | — | Tape & Reel (STR suffix) |