IRF9Z34NSTRRPBF vs IRF9Z34NPBF Comparison

Detailed side-by-side comparison of IRF9Z34NSTRRPBF by Infineon and IRF9Z34NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF9Z34NSTRRPBF IRF9Z34NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Obsolete Active
Stock Status In Stock In Stock
Unit Price (USD) $1.55 $0.65
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRF9Z34NSTRRPBF —
Transistor Type P-Channel MOSFET (HexFET) —
Drain-to-Source Voltage (Vdss) -55 V —
Continuous Drain Current (Id) at Tc=25C -19 A -19 A
Gate Threshold Voltage (Vgs(th)) -2 V to -4 V [DATA_NEEDED: Vgs(th) typical/min/max]
Power Dissipation (Pd) 68 W (Tc) —
Power Dissipation (Ta) 3.8 W —
Thermal Resistance, Junction-to-Case (RthJC) 2.2 K/W (max) —
Maximum Junction Temperature 175 °C —
Package / Case D2PAK (TO-263-3), 3-pin (2 + Tab) —
Mounting Type Surface Mount Through Hole
Operating Frequency Optimized for switching below 100 kHz —
Avalanche Rated Yes (fully avalanche rated) —
RoHS Status Compliant (Pb-free suffix PBF) Compliant
Packaging Tape & Reel (STR suffix) —
Polarity / Channel Type — P-Channel
Drain-Source Voltage (Vds) — -55 V
Pulsed Drain Current (Idm) — -72 A
Power Dissipation (Pd) at Tc=25C — 68 W
On-Resistance Rds(on) at Vgs=-10V — 100 milliohm (typical)
Gate Charge (Qg) — 23.3 nC (per Mouser listing)
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Operating Temperature Range — -55C to +175C (junction)
Package — TO-220AB (through-hole, 3-pin)
Pinout (G-D-S) — Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source
Technology — HEXFET (5th generation)
Lead-Free / Halogen-Free — Yes (PBF suffix)

Datasheets & Resources

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