IRF9Z34NSTRRPBF vs IRF9Z34NPBF Vergleich

Detaillierter Direktvergleich von IRF9Z34NSTRRPBF von Infineon und IRF9Z34NPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF9Z34NSTRRPBF IRF9Z34NPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Obsolete Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,55 $0,65
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRF9Z34NSTRRPBF —
Transistortyp P-Channel MOSFET (HexFET) —
Drain-to-Source Voltage (Vdss) -55 V —
Continuous Drain Current (Id) at Tc=25C -19 A -19 A
Gate Threshold Voltage (Vgs(th)) -2 V to -4 V [DATA_NEEDED: Vgs(th) typical/min/max]
Power Dissipation (Pd) 68 W (Tc) —
Power Dissipation (Ta) 3.8 W —
Thermal Resistance, Junction-to-Case (RthJC) 2.2 K/W (max) —
Maximum Junction Temperature 175 °C —
Gehäuse / Bauform D2PAK (TO-263-3), 3-pin (2 + Tab) —
Montageart Surface Mount Through Hole
Operating Frequency Optimized for switching below 100 kHz —
Avalanche Rated Yes (fully avalanche rated) —
RoHS-Status Compliant (Pb-free suffix PBF) Compliant
Packaging Tape & Reel (STR suffix) —
Polarity / Channel Type — P-Channel
Drain-Source Voltage (Vds) — -55 V
Pulsed Drain Current (Idm) — -72 A
Power Dissipation (Pd) at Tc=25C — 68 W
On-Resistance Rds(on) at Vgs=-10V — 100 milliohm (typical)
Gate Charge (Qg) — 23.3 nC (per Mouser listing)
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Betriebstemperaturbereich — -55C to +175C (junction)
Gehäuse — TO-220AB (through-hole, 3-pin)
Pinout (G-D-S) — Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source
Technology — HEXFET (5th generation)
Lead-Free / Halogen-Free — Yes (PBF suffix)

Datenblätter & Ressourcen

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