IRF9Z34NSTRRPBF vs IRF9Z34NPBF 比較
詳細な並列比較: IRF9Z34NSTRRPBF メーカー: Infineon および IRF9Z34NPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRF9Z34NSTRRPBF | IRF9Z34NPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | Obsolete | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.55 | $0.65 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRF9Z34NSTRRPBF | — |
| トランジスタタイプ | P-Channel MOSFET (HexFET) | — |
| Drain-to-Source Voltage (Vdss) | -55 V | — |
| Continuous Drain Current (Id) at Tc=25C | -19 A | -19 A |
| Gate Threshold Voltage (Vgs(th)) | -2 V to -4 V | [DATA_NEEDED: Vgs(th) typical/min/max] |
| Power Dissipation (Pd) | 68 W (Tc) | — |
| Power Dissipation (Ta) | 3.8 W | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 2.2 K/W (max) | — |
| Maximum Junction Temperature | 175 °C | — |
| パッケージ / ケース | D2PAK (TO-263-3), 3-pin (2 + Tab) | — |
| 実装タイプ | Surface Mount | Through Hole |
| Operating Frequency | Optimized for switching below 100 kHz | — |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| RoHS ステータス | Compliant (Pb-free suffix PBF) | Compliant |
| Packaging | Tape & Reel (STR suffix) | — |
| Polarity / Channel Type | — | P-Channel |
| Drain-Source Voltage (Vds) | — | -55 V |
| Pulsed Drain Current (Idm) | — | -72 A |
| Power Dissipation (Pd) at Tc=25C | — | 68 W |
| On-Resistance Rds(on) at Vgs=-10V | — | 100 milliohm (typical) |
| Gate Charge (Qg) | — | 23.3 nC (per Mouser listing) |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| 動作温度範囲 | — | -55C to +175C (junction) |
| パッケージ | — | TO-220AB (through-hole, 3-pin) |
| Pinout (G-D-S) | — | Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source |
| Technology | — | HEXFET (5th generation) |
| Lead-Free / Halogen-Free | — | Yes (PBF suffix) |