IRF9Z34NSTRRPBF vs IRF9Z34NPBF 비교
다음의 상세 나란히 비교: IRF9Z34NSTRRPBF 제조: Infineon 및 IRF9Z34NPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF9Z34NSTRRPBF | IRF9Z34NPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | Obsolete | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.55 | $0.65 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRF9Z34NSTRRPBF | — |
| 트랜지스터 유형 | P-Channel MOSFET (HexFET) | — |
| Drain-to-Source Voltage (Vdss) | -55 V | — |
| Continuous Drain Current (Id) at Tc=25C | -19 A | -19 A |
| Gate Threshold Voltage (Vgs(th)) | -2 V to -4 V | [DATA_NEEDED: Vgs(th) typical/min/max] |
| Power Dissipation (Pd) | 68 W (Tc) | — |
| Power Dissipation (Ta) | 3.8 W | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 2.2 K/W (max) | — |
| Maximum Junction Temperature | 175 °C | — |
| 패키지 / 케이스 | D2PAK (TO-263-3), 3-pin (2 + Tab) | — |
| 실장 유형 | Surface Mount | Through Hole |
| Operating Frequency | Optimized for switching below 100 kHz | — |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| RoHS 상태 | Compliant (Pb-free suffix PBF) | Compliant |
| Packaging | Tape & Reel (STR suffix) | — |
| Polarity / Channel Type | — | P-Channel |
| Drain-Source Voltage (Vds) | — | -55 V |
| Pulsed Drain Current (Idm) | — | -72 A |
| Power Dissipation (Pd) at Tc=25C | — | 68 W |
| On-Resistance Rds(on) at Vgs=-10V | — | 100 milliohm (typical) |
| Gate Charge (Qg) | — | 23.3 nC (per Mouser listing) |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| 동작 온도 범위 | — | -55C to +175C (junction) |
| 패키지 | — | TO-220AB (through-hole, 3-pin) |
| Pinout (G-D-S) | — | Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source |
| Technology | — | HEXFET (5th generation) |
| Lead-Free / Halogen-Free | — | Yes (PBF suffix) |