IRFB3207ZPBF vs IRF3007STRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB3207ZPBF disebabkan oleh Infineon dan IRF3007STRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFB3207ZPBF | IRF3007STRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRFB3207ZPBF | — |
| Series | HEXFET | — |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | — |
| Drain-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID) at TC=25C | 120 A | — |
| Silicon-Limited Drain Current | 170 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissition (PD) at TC=25C | 300 W | — |
| Suhu Hubungan Operasi | -55 C to +175 C | -55°C to +175°C |
| Kemasan | TO-220AB (3-lead through-hole) | — |
| Jenis Pemasangan | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| Aras MSL | N/A (through-hole) | — |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | Yes (Repetitive Avalanche Allowed up to Tjmax) |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-to-Source Breakdown Voltage (V(BR)DSS) | — | 75 V |
| Continuous Drain Current (Id) at Tc=25°C | — | 62 A |
| Pulsed Drain Current (Idm) | — | 250 A |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 12.6 mΩ typical at VGS=10V |
| Gate-to-Source Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | — | 110 nC typical |
| Maximum Power Dissipation (Pd) | — | 120 W at Tc=25°C |
| Thermal Resistance Junction-to-Case (RθJC) | — | 1.0 °C/W |
| Thermal Resistance Junction-to-Ambient (RθJA) | — | 40 °C/W |
| Package Type | — | D2PAK (TO-263), 3-pin (2+Tab), Surface Mount |
| Status RoHS | — | Compliant (Lead-Free, PBF suffix) |