IRFB3207ZPBF vs IRF3007STRLPBF 比較

詳細並排比較 IRFB3207ZPBF 由 Infineon 與 IRF3007STRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRF3007STRLPBF IRF3007STRLPBF - 75V N-Channel MOSFET, 62A, D2PAK | Infineon

IRF3007STRLPBF - 75V N-Channel MOSFET, 62A, D2PAK | Infineon

IRF3007STRLPBF ✓ 啟用中

規格比較

參數 IRFB3207ZPBF IRF3007STRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRFB3207ZPBF —
Series HEXFET —
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) —
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID) at TC=25C 120 A —
Silicon-Limited Drain Current 170 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissition (PD) at TC=25C 300 W —
工作接面溫度 -55 C to +175 C -55°C to +175°C
封裝 TO-220AB (3-lead through-hole) —
安裝類型 Through Hole Surface Mount
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
MSL 等級 N/A (through-hole) —
Avalanche Rated Yes (improved Z-variant ruggedness) Yes (Repetitive Avalanche Allowed up to Tjmax)
Polarity — N-Channel
MOSFET Operating Mode — Enhancement
Drain-to-Source Breakdown Voltage (V(BR)DSS) — 75 V
Continuous Drain Current (Id) at Tc=25°C — 62 A
Pulsed Drain Current (Idm) — 250 A
Static Drain-to-Source On-Resistance (RDS(on)) — 12.6 mΩ typical at VGS=10V
Gate-to-Source Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Total Gate Charge (Qg) — 110 nC typical
Maximum Power Dissipation (Pd) — 120 W at Tc=25°C
Thermal Resistance Junction-to-Case (RθJC) — 1.0 °C/W
Thermal Resistance Junction-to-Ambient (RθJA) — 40 °C/W
Package Type — D2PAK (TO-263), 3-pin (2+Tab), Surface Mount
RoHS 狀態 — Compliant (Lead-Free, PBF suffix)

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