IRFH5020TRPBF vs IRF7469TRPBF Perbandingan

Perbandingan bersamaan detil IRFH5020TRPBF dari Infineon dan IRF7469TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFH5020TRPBF IRF7469TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Product Family HEXFET Power MOSFET —
FET Type MOSFET N-Channel, Metal Oxide N-Channel
Configuration Single with built-in diode —
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TA=25°C 5.1 A —
Pulsed Drain Current (IDM) 63 A —
Gate-to-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=10V 55 mΩ —
Gate Charge (Qg) typ 11 nC —
Power Dissipation (TA=25°C) 3.6 W —
Dissipasi Listrik (TC=25°C) 8.3 W —
Thermal Resistance, Junction-to-PCB (RthJB) 0.8 °C/W —
Package Type 8-PQFN (5x6 mm) SuperSO8 —
Tipe Mounting Surface Mount Surface Mount
Profile Height ≤ 0.9 mm —
Rentang Suhu Kerja -55 °C to +150 °C (TJ max) -55°C to +150°C (Tj)
Qualification Standard JEDEC (Normal level) —
Gate Drive Optimization 10 V VGS —
RoHS Compliance Compliant (Pb-free suffix PBF) —
Level MSL 1 (per industry standard for PQFN-8) 1 (unlimited)
Technology — IR MOSFET™ (HEXFET)
Drain-Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id) at TA=25°C — 9 A
Rds(on) Max at Vgs=10V — 17 mΩ
Total Gate Charge (Qg) — 15 nC
Gate-Source Voltage (Vgs) Max — ±20 V
Power Dissipation (Pd) at TA=25°C — 2.5 W
Paket — 8-SO (SOIC-8)
Status RoHS — Compliant
Lead-Free — Yes
Bebas Halogen — Yes
Channel Mode — Enhancement
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr]

Spek dan Sumber

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