IRFH5300TRPBF - 30V N-Channel HEXFET MOSFET | Infineon
MPN: IRFH5300TRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.89 | $1.89 |
| 10 | $1.62 | $16.20 |
| 100 | $1.21 | $121.00 |
| 500 | $0.89 | $445.00 |
| 1,000 | $0.71 | $710.00 |
| 3,000 | $0.45 | $1,350.00 |
IRFH5300TRPBF Overview
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate current flow between drain and source. The N-channel enhancement-mode variant is the workhorse of low-voltage, high-current DC power conversion because electrons carry the current, giving lower on-resistance per unit silicon area than P-channel devices. Within the wider taxonomy, the IRFH5300 sits in the StrongIRFET sub-family of Infineon's HEXFET portfolio, targeting 20-30 V rails such as 12 V buses, multi-cell lithium battery packs, and high-current point-of-load converters.
The headline figures of 1.4 mOhm RDS(on) at 10 V VGS, 50 nC total gate charge, and 336 A pulsed current combine to give very low conduction loss and fast switching in 5x6 mm PQFN outline. Its logic-level threshold allows direct drive from 5 V microcontrollers and dedicated gate-driver ICs without charge-pump or bootstrap biasing. The exposed-drain pad provides junction-to-PCB thermal resistance below 0.8 C/W when soldered to a sufficiently large copper plane, supporting high continuous current in space-constrained boards.
Architecturally, the die uses Infineon's proven HEXFET cellular planar stripe layout with a 30 V breakdown voltage that is over-specified for most 12 V applications, giving ample derating margin against transients such as load-dump and inrush on automotive 12 V rails. The PQFN-8 (5x6) package also integrates the source and gate bond wires inside the lead frame, keeping the loop inductance low for hard-switched topologies.
Typical applications include 12 V OR-ing FETs in redundant telecom and server power systems, low-side switches in DC motor drives, battery protection circuits in cordless tools and e-bikes, and synchronous rectifier FETs on the secondary side of 12 V isolated DC-DC bricks. The device is also widely used as a hot-swap controller pass element on 12 V distribution boards.
When designing with this part, prioritize a large top-side copper pour under the exposed pad to maintain junction temperature below 150 C. Drive the gate with a 10-ohm series resistor to damp ringing, and ensure the VGS stays well below the +/-20 V absolute maximum during switching transients.
Drop-in alternatives for IRFH5300TRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRFH5300TRPBF (same form factor and footprint) β differing in Drain-Source Voltage (VDS), Package, Technology, Continuous Drain Current (ID) at TA=25C, Continuous Drain Current (ID) at TC=25C.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRFH5300TR2PBF
β Drop-Inπ Reference alternative (not in catalog)
IRFH5301TRPBF
β Drop-Inβ In Stock
$0.36 / Unit
View Datasheet βIRFH5015TRPBF
β Drop-Inβ In Stock
$0.62 / Unit
View Datasheet βIRF7854TRPBF
β Drop-Inβ In Stock
$0.48 / Unit
View Datasheet βIRFH5300TRPBF Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TA=25C | 40 A |
| Continuous Drain Current (ID) at TC=25C | 100 A |
| Pulsed Drain Current (IDM) | 336 A |
| On-Resistance RDS(on) max at VGS=10V | 1.4 mOhm |
| Gate-Source Voltage (VGS) max | +/-20 V |
| Total Gate Charge (Qg) | 50 nC |
| Power Dissition at TA=25C | 3.6 W |
| Power Dissipation at TC=25C | 250 W |
| Operating Temperature Range | -55C to +150C |
| Package | PQFN-8 (5x6 mm) |
| Mounting Type | Surface Mount |
| Technology | HEXFET (StrongIRFET) |
| Gate Drive Level | Logic-level (5V optimized) |
| JEDEC Qualification | Yes |
| RoHS Status | Compliant |
IRFH5300TRPBF Pin Configuration
| Pin 1 | Drain β Drain (internally connected to pins 2, 3, and exposed pad) |
| Pin 2 | Drain β Drain (internally connected to pins 1, 3, and exposed pad) |
| Pin 3 | Drain β Drain (internally connected to pins 1, 2, and exposed pad) |
| Pin 4 | Gate β Gate control input |
| Pin 5 | Source β Source (internally connected to pins 6, 7, 8) |
| Pin 6 | Source β Source (internally connected to pins 5, 7, 8) |
| Pin 7 | Source β Source (internally connected to pins 5, 6, 8) |
| Pin 8 | Source β Source (internally connected to pins 5, 6, 7) |
Safe Operating Area (DC)
Typical Applications
IRFH5300TRPBF is suitable for 6 applications: 12V OR-ing FET for Redundant Power Systems, Battery Operated DC Motor Inverter, Synchronous Rectifier for 12V DC-DC Converters, Hot-Swap Controller Pass Element, Lithium Battery Pack Protection Circuit, Load Switch and Power Distribution Switch.
12V OR-ing FET for Redundant Power Systems
The IRFH5300TRPBF is ideally suited as an OR-ing MOSFET in 12V redundant power architectures found in telecom and server equipment. Its 30V VDS rating provides 18V headroom above a nominal 12V rail, protecting against transients and load transients. The 1.4 mOhm RDS(on) at VGS=10V minimizes forward voltage drop during normal operation, typically limiting losses to under 200mW at 12A per FET. The logic-level gate threshold allows direct drive from standard OR-ing controller ICs such as the LTC4352 or TPS2410, which use 5V gate drive to control reverse-current blocking. The PQFN-8 (5x6 mm) footprint enables high-density PCB layouts where multiple OR-ing FETs are placed in parallel for N+1 redundancy. The part is rated for 100A continuous current at TC=25C, supporting high-availability systems with 12V distribution buses carrying 50-80A per rail.
Recommended
Battery Operated DC Motor Inverter
In battery-operated DC motor inverters such as cordless power tools, e-bikes, and small EVs, the IRFH5300TRPBF serves as a low-side switch in H-bridge configurations. Its 40A continuous rating at TA=25C and 336A pulsed current handling support peak motor currents during startup and stall conditions. The 50 nC total gate charge enables switching frequencies above 20 kHz for PWM speed control, while the logic-level gate drive allows direct connection to 3.3V or 5V microcontroller outputs. The 1.4 mOhm RDS(on) keeps conduction losses below 1% of motor power, extending battery runtime. The PQFN-8 package's exposed drain pad provides low thermal resistance when soldered to a copper plane, critical for sustained high-current operation in compact tool housings.
Recommended
Synchronous Rectifier for 12V DC-DC Converters
The IRFH5300TRPBF functions as the synchronous rectifier FET on the secondary side of isolated 12V DC-DC converters and non-isolated buck converters. Its 30V VDS rating is well-matched to 12V output rails with margin for voltage spikes, and the 1.4 mOhm RDS(on) at 10V VGS delivers efficiency above 95% in typical 10-20A synchronous buck designs. The 50 nC gate charge enables switching frequencies of 200-500 kHz in modern point-of-load converters, where the FET is driven by a dedicated synchronous buck controller. Replacing a Schottky diode with the IRFH5300TRPBF typically reduces rectifier losses by 50-70%, translating to 2-4% overall efficiency improvement and reduced heatsink requirements.
Recommended
Hot-Swap Controller Pass Element
For 12V hot-swap and inrush current limiting circuits, the IRFH5300TRPBF acts as the main pass element controlled by a hot-swap controller IC. Its 336A pulsed current rating handles the initial charging of large bulk capacitors without tripping upstream circuit breakers. The logic-level gate drive allows direct interface with hot-swap controllers operating from 3.3V or 5V supply rails. The 1.4 mOhm RDS(on) keeps steady-state voltage drop below 15mV at 10A load, minimizing power dissipation during normal operation. The PQFN-8 package's low thermal resistance (below 0.8 C/W junction-to-PCB with proper copper) supports continuous operation in server and networking equipment where board space is at a premium.
Recommended
Lithium Battery Pack Protection Circuit
In multi-cell lithium battery packs (3S-7S configurations), the IRFH5300TRPBF provides low-side disconnect switching for overcurrent and short-circuit protection. The 30V VDS rating supports 4S LiFePO4 packs (nominal 12.8V) and 3S Li-ion packs (nominal 11.1V) with adequate derating margin. The 1.4 mOhm RDS(on) at VGS=10V limits voltage drop to under 50mV at 30A continuous discharge, preserving battery capacity. The logic-level gate threshold enables direct control from battery management ICs (BMICs) operating at 3.3V. The PQFN-8 (5x6 mm) package fits within space-constrained battery pack enclosures while providing low thermal resistance for reliable operation at peak discharge currents.
Recommended
Load Switch and Power Distribution Switch
The IRFH5300TRPBF serves as a high-side or low-side load switch in 12V power distribution systems, including industrial control boards and point-of-load regulation. Its 40A continuous current rating supports direct switching of high-power loads such as motors, solenoids, and LED arrays without requiring parallel FETs. The 1.4 mOhm RDS(on) keeps conduction losses below 0.5% at 10A load. The logic-level gate drive allows PWM dimming of LED loads or variable-speed motor control directly from microcontroller GPIO pins. The PQFN-8 package's compact footprint enables dense power distribution designs on backplanes and controller boards where multiple switched outputs are required.
Recommended
Recommended Products Summary
Engineering reference data for IRFH5300TRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFH5300TR2PBF | IRFH5301TRPBF | IRFH5015TRPBF | IRF7854TRPBF |
|---|---|---|---|---|---|
| Package | PQFN-8 (5x6 mm) | PQFN-8 (5x6 mm) - same | PQFN-8 (5x6 mm) - same | PQFN-8 (5x6 mm) - same | PQFN-8 (5x6 mm) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 40 V | 30 V |
| RDS(on) max at VGS=10V | 1.4 mOhm | 1.4 mOhm | 1.8 mOhm | 1.5 mOhm | 2.0 mOhm |
| Continuous Drain Current (TC=25C) | 100 A | 100 A | 90 A | 100 A | 85 A |
| Pulsed Drain Current | 336 A | 336 A | 300 A | 340 A | 280 A |
| Total Gate Charge (Qg) | 50 nC | 50 nC | 55 nC | 60 nC | 48 nC |
| Gate Drive Level | Logic-level (5V) | Logic-level (5V) | Logic-level (5V) | Logic-level (5V) | Logic-level (5V) |
| Reel Quantity | 3000 | 4000 | 3000 | 3000 | 3000 |
Key Differentiators
- Industry-standard StrongIRFET with proven reliability (vs IRFH5301TRPBF)
- 30V VDS optimized for 12V systems (vs IRFH5015TRPBF)
- Logic-level gate drive for direct MCU control (vs Standard 10V gate drive MOSFETs)
Design Notes
The IRFH5300TRPBF can dissipate up to 250W at TC=25C, but in typical surface-mount applications the practical limit is set by the PCB thermal design. Use a minimum 1 square inch of 2oz copper on the drain pad to achieve junction-to-PCB thermal resistance below 0.8 C/W. For continuous 100A operation, the junction temperature rise above ambient is approximately 100-120C with proper thermal design, requiring ambient temperatures below 30C or active cooling. Estimated: at 100A continuous with 1 sq in 2oz copper, PD = I^2 * RDS(on) = 100^2 * 0.0014 = 14W, resulting in 11C temperature rise (14W * 0.8 C/W).
Keep the gate drive loop area as small as possible by placing the gate driver IC within 5mm of the gate pin. Use a 10-ohm series gate resistor to damp ringing and limit peak gate current during switching. Connect the source sense (pin 5-8) directly to the power ground plane, not through a Kelvin connection, as the PQFN-8 package does not provide a dedicated source-sense pin. The exposed pad must be soldered to a continuous copper plane with thermal vias (0.3mm diameter, 1mm pitch) for optimal heat dissipation.
Do not exceed the +/-20V VGS absolute maximum rating, especially during turn-off transients when the parasitic drain-gate capacitance can inject voltage into the gate. Add a 10kohm pull-down resistor from gate to source to ensure the FET stays off during power-up and fault conditions. When using the IRFH5300TRPBF in OR-ing applications, verify the body diode reverse recovery time against the switching frequency to avoid shoot-through. Do not operate above 150C junction temperature, as this degrodes the die metallization over time.
Compliance Information
RoHS compliant per Infineon product page. JEDEC qualified per datasheet. Not AEC-Q100 qualified - for automotive applications, use AEC-Q100 qualified variants from the StrongIRFET family.
