IRFH5301TRPBF vs BSC050N04LSGATMA1 Comparison
Detailed side-by-side comparison of IRFH5301TRPBF by Infineon and BSC050N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFH5301TRPBF
IRFH5301TRPBF - 30V 100A N-Channel HEXFET MOSFET | Infineon
IRFH5301TRPBF β ActiveInfineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | IRFH5301TRPBF | BSC050N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.41 |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (StrongIRFET) | OptiMOS 3 (trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (TA, 25C) | 35 A | β |
| Continuous Drain Current (TC, 25C) | 100 A | β |
| RDS(on) Max @ VGS=10V | 1.85 mOhm | β |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | β |
| Total Gate Charge (Qg) | 37 nC (typical) | β |
| Power Dissipation (TA) | 3.6 W | β |
| Power Dissipation (TC) | 110 W | β |
| Operating Temperature Range | -55C to +150C (junction) | -55C to +150C |
| Package | PQFN (5x6 mm) Single Die | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Drive Logic Level | Optimized for 5 V VGS drive | β |
| RoHS / Halogen-Free | RoHS compliant, Halogen-free | β |
| Qualification | JEDEC standard | β |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current at 25C (ID, Ta) | β | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | β | 85 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 57 W |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Avalanche Energy Rated | β | Yes (single-pulse avalanche) |
| RoHS Status | β | Compliant |
| MSL Level | β | 1 |