IRFH7440TRPBF vs IRFH7084TRPBF Comparison

Detailed side-by-side comparison of IRFH7440TRPBF by Infineon and IRFH7084TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFH7440TRPBF IRFH7084TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc=25°C) 85 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance (RDS(on) max at VGS=10V) 2.4 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Total Gate Charge (Qg) 92 nC —
Power Dissipation (PD, Tc=25°C) 104 W 156 W
Operating Junction Temperature -55°C to +150°C —
Technology StrongIRFET™ (HEXFET) StrongIRFET™ (trench MOSFET)
Package 8-PQFN (5x6 mm) with exposed thermal pad 8-PQFN 5x6 mm (SuperSO8)
Mounting Type Surface Mount Surface Mount
Gate Drive Optimization 10V (Normal Level), switching < 100 kHz —
Qualification JEDEC standard —
Lead-Free / RoHS Lead-Free, RoHS Compliant (PBF suffix) —
MSL (Moisture Sensitivity Level) MSL 1 —
Typical Applications Brushed motor drive, DC-DC converters, solenoid/load switching —
Continuous Drain Current (ID, Tc=25°C, package-limited) — 100 A
Silicon-Limited Drain Current — 265 A
On-Resistance RDS(on) max @ VGS=10V — 1.25 mΩ
On-Resistance RDS(on) typ @ VGS=10V — 0.95 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage VGS(th) typ — 1.7 V to 2.7 V
Input Capacitance (Ciss) max @ 25V — 6560 pF
Operating Temperature Range — -55°C to +175°C (TJ)
MSL Level — 1
RoHS Status — Compliant
Halogen Free — Compliant
RthJC max — 0.96 °C/W (per datasheet)

Datasheets & Resources

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