IRFH7440TRPBF vs IRFH7084TRPBF 比較

詳細並排比較 IRFH7440TRPBF 由 Infineon 與 IRFH7084TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFH7084TRPBF IRFH7084TRPBF - 40V 100A N-Ch StrongIRFET PQFN | Infineon

IRFH7084TRPBF - 40V 100A N-Ch StrongIRFET PQFN | Infineon

IRFH7084TRPBF ✓ 啟用中

規格比較

參數 IRFH7440TRPBF IRFH7084TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc=25°C) 85 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance (RDS(on) max at VGS=10V) 2.4 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Total Gate Charge (Qg) 92 nC —
Power Dissipation (PD, Tc=25°C) 104 W 156 W
工作接面溫度 -55°C to +150°C —
Technology StrongIRFET™ (HEXFET) StrongIRFET™ (trench MOSFET)
封裝 8-PQFN (5x6 mm) with exposed thermal pad 8-PQFN 5x6 mm (SuperSO8)
安裝類型 Surface Mount Surface Mount
Gate Drive Optimization 10V (Normal Level), switching < 100 kHz —
Qualification JEDEC standard —
Lead-Free / RoHS Lead-Free, RoHS Compliant (PBF suffix) —
MSL (Moisture Sensitivity Level) MSL 1 —
Typical Applications Brushed motor drive, DC-DC converters, solenoid/load switching —
Continuous Drain Current (ID, Tc=25°C, package-limited) — 100 A
Silicon-Limited Drain Current — 265 A
On-Resistance RDS(on) max @ VGS=10V — 1.25 mΩ
On-Resistance RDS(on) typ @ VGS=10V — 0.95 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage VGS(th) typ — 1.7 V to 2.7 V
Input Capacitance (Ciss) max @ 25V — 6560 pF
工作溫度範圍 — -55°C to +175°C (TJ)
MSL 等級 — 1
RoHS 狀態 — Compliant
無鹵素 — Compliant
RthJC max — 0.96 °C/W (per datasheet)

資料表與資源

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