IRFH7440TRPBF vs IRFH7084TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFH7440TRPBF disebabkan oleh Infineon dan IRFH7084TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFH7440TRPBF IRFH7084TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc=25°C) 85 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance (RDS(on) max at VGS=10V) 2.4 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Total Gate Charge (Qg) 92 nC —
Power Dissipation (PD, Tc=25°C) 104 W 156 W
Suhu Hubungan Operasi -55°C to +150°C —
Technology StrongIRFET™ (HEXFET) StrongIRFET™ (trench MOSFET)
Kemasan 8-PQFN (5x6 mm) with exposed thermal pad 8-PQFN 5x6 mm (SuperSO8)
Jenis Pemasangan Surface Mount Surface Mount
Gate Drive Optimization 10V (Normal Level), switching < 100 kHz —
Qualification JEDEC standard —
Lead-Free / RoHS Lead-Free, RoHS Compliant (PBF suffix) —
MSL (Moisture Sensitivity Level) MSL 1 —
Typical Applications Brushed motor drive, DC-DC converters, solenoid/load switching —
Continuous Drain Current (ID, Tc=25°C, package-limited) — 100 A
Silicon-Limited Drain Current — 265 A
On-Resistance RDS(on) max @ VGS=10V — 1.25 mΩ
On-Resistance RDS(on) typ @ VGS=10V — 0.95 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage VGS(th) typ — 1.7 V to 2.7 V
Input Capacitance (Ciss) max @ 25V — 6560 pF
Gambaran Suhu Operasi — -55°C to +175°C (TJ)
Aras MSL — 1
Status RoHS — Compliant
Boson Bebas — Compliant
RthJC max — 0.96 °C/W (per datasheet)

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