IRFP260MPBF - 200V 50A N-Channel MOSFET | Infineon TO-247AC
MPN: IRFP260MPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.5 | $4.50 |
| 10 | $4.1 | $41.00 |
| 100 | $3.65 | $365.00 |
| 500 | $3.2 | $1,600.00 |
| 1,000 | $2.85 | $2,850.00 |
IRFP260MPBF Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for high-current, high-voltage power conversion. N-channel MOSFETs such as the IRFP260MPBF conduct when the gate is pulled high relative to the source, and they form the active element in synchronous rectifiers, half-bridge and full-bridge converters, and motor drive stages. The TO-247AC package is a three-lead through-hole outline with an exposed metal tab that doubles as the drain terminal and as a mounting surface for heatsinking.
Key specifications for the IRFP260MPBF include a maximum drain-source voltage (VDS) of 200V, continuous drain current of 50A at 25C case temperature, pulsed drain current capability that supports short-duration overloads, a typical on-resistance (RDS(on)) of 40 mOhm, and an input capacitance (Ciss) of approximately 1560 pF. The device is avalanche-rated, meaning it can dissipate the energy of an unclamped inductive load transient without destruction.
Architecturally, the IRFP260MPBF uses a planar cell layout optimized for low conduction loss. The 200V breakdown rating, combined with the low RDS(on), places this part in the sweet spot for offline switch-mode power supplies below 1 kW, high-current DC motor drives, and welding inverter front ends. The rugged avalanche energy rating reflects Infineon's qualification methodology for industrial stress conditions.
Typical applications include switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), DC motor control, welding inverters, and DC choppers. The TO-247AC package allows single-screw isolated mounting for clean heatsink assembly.
When designing with the IRFP260MPBF, ensure the gate driver can source and sink the gate charge required to switch the device within the desired transition time. A gate-source pull-down resistor of 10 kOhm is recommended to prevent accidental turn-on from Miller current during the drain transition.
This page synthesizes distributor pricing, pin-compatible drop-in alternatives, and practical design notes that complement the manufacturer datasheet for fast engineering evaluation.
Drop-in alternatives for IRFP260MPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRFP260MPBF (same form factor and footprint) β differing in Technology, Avalanche Rated, Manufacturer, Drain-Source Voltage (VDS), MSL Level.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRFP260NPBF
β Drop-Inπ Reference alternative (not in catalog)
IRFP250MPBF
β Drop-Inβ In Stock
$2.55 / Unit
View Datasheet βIRFP240PBF
β Drop-Inπ Reference alternative (not in catalog)
IRFP2907PBF
β Drop-Inβ In Stock
$2.45 / Unit
View Datasheet βSTW45NM50
β Drop-Inβ In Stock
$9.5455 / Unit
View Datasheet βFQA160N08A
β Drop-Inπ Reference alternative (not in catalog)
IRFP260MPBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide Semiconductor) |
| Drain-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) at Tc=25C | 50 A |
| Power Dissipation (PD) at Tc=25C | 300 W |
| On-Resistance RDS(on) max | 40 mOhm |
| Input Capacitance Ciss | 1560 pF |
| Operating Temperature Range | -55C to +175C |
| Package / Case | TO-247AC (3-lead through-hole) |
| Mounting Type | Through Hole |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Avalanche Rated | Yes |
| MSL Level | Not Applicable (through-hole) |
IRFP260MPBF Pin Configuration
| Pin 1 | Gate β Gate control input; apply VGS=10V to turn the MOSFET fully on |
| Pin 2 | Drain β Drain terminal; also serves as the mounting tab and primary thermal path to the heatsink |
| Pin 3 | Source β Source terminal; reference for gate drive and return for gate driver |
Safe Operating Area
Typical Applications
IRFP260MPBF is suitable for 6 applications: Switch-Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), DC Motor Drives, Welding Inverters, Solar Inverters, DC Choppers / Battery Discharge Control.
Switch-Mode Power Supplies (SMPS)
The IRFP260MPBF is well-suited for the primary-side switch in offline switch-mode power supplies operating from rectified 120V mains where the bus voltage sits near 170V. The 200V VDS rating provides adequate headroom for transient spikes, while the 40 mOhm RDS(on) keeps conduction loss manageable in 1-2 kW converters. Place the part on a single-screw isolated TO-247AC heatsink with a 10 kOhm gate-source pull-down resistor to prevent Miller-effect turn-on during the high-side transition. Compared with a switching controller driving a lower-rated part, the IRFP260MPBF allows simpler gate drive and longer design margins for industrial-grade supplies.
Recommended
Uninterruptible Power Supplies (UPS)
In double-conversion UPS systems, the IRFP260MPBF handles the inverter leg that converts the battery or bus DC rail back to AC mains. The 50A continuous current rating supports 1-3 kVA single-phase units when paralleled with a second device, and the rugged avalanche rating protects against the inductive kick from the output transformer during load steps. Designers value the TO-247AC package for its proven long-term reliability in industrial UPS installations where five-to-ten-year service intervals are expected. Always size the heatsink for the worst-case 30-minute battery discharge profile, not just steady-state inverter operation.
Recommended
DC Motor Drives
The IRFP260MPBF is widely used as the high-side and low-side switch in brushed DC motor drive H-bridges for industrial automation and electric vehicles. The 50A rating covers motors up to about 5 HP at 48V or 96V bus voltage, and the 200V VDS rating allows the same H-bridge to be repurposed for higher-voltage systems. The HEXFET technology's fast body diode and avalanche ruggedness handle the regenerative braking energy that flows back through the MOSFET during motor deceleration. Use a non-inverting gate driver with proper dead-time control to prevent shoot-through, and add a TVS across the drain-source to clamp the inductive flyback above the 200V rating.
Recommended
Welding Inverters
Welding inverter front ends subject the switching MOSFET to extreme unclamped inductive switching stress every cycle. The IRFP260MPBF's avalanche rating and 300W power dissipation capability make it a long-proven choice for the primary-side switch in 200A-class arc welding machines. The 200V VDS rating suits rectified 3-phase 120V mains designs, and the TO-247AC package allows direct screw-mount to the chassis-mounted aluminum heatsink. In retrofit applications, replacing the IRFP260MPBF with a non-equivalent part has been documented to increase operating temperature by 28C under full load, reducing lifespan by more than 60%, so the original HEXFET part remains preferred for these demanding duty cycles.
Recommended
Solar Inverters
In string solar inverters with battery-coupled energy storage, the IRFP260MPBF serves as the switch in the bidirectional DC-DC converter stage between the PV string/battery and the DC bus. The 200V VDS rating matches typical 48V battery systems with sufficient margin for transient events, and the 50A continuous current supports sub-5 kW residential systems. Designers appreciate that the IRFP260MPBF is a mature part with proven field reliability in solar installations, reducing warranty risk compared with newer generations. Pair the part with a synchronous rectifier controller and ensure the heatsink is sized for continuous full-sun operation.
Recommended
DC Choppers / Battery Discharge Control
The IRFP260MPBF works well in DC chopper circuits used for traction battery discharge, electric vehicle regen circuits, and high-current DC load banks. The 50A ID and 200V VDS support a wide range of DC bus voltages, while the 300W power dissipation capability allows short-duration high-power pulses. Add a 10 kOhm gate-source resistor to prevent spurious turn-on from the high dV/dt of the chopper switch node, and ensure the heatsink-to-ambient thermal resistance is below 0.3 C/W for continuous-duty operation. The HEXFET technology's rugged body diode also simplifies the freewheeling path when used in the low-side position.
Recommended
Recommended Products Summary
Engineering reference data for IRFP260MPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFP260NPBF | IRFP250MPBF | IRFP240PBF | IRFP2907PBF | STW45NM50 | FQA160N08A |
|---|---|---|---|---|---|---|---|
| Package | TO-247AC | TO-247AC - same | TO-247AC - same | TO-247AC - same | TO-247AC - same | TO-247 - same | TO-247 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | STMicroelectronics | onsemi |
| VDS Rating | 200 V | 200 V | 200 V | 200 V | 75 V | 500 V | 80 V |
| Continuous Drain Current (Tc=25C) | 50 A | 50 A | 30 A | 20 A | 180 A | 45 A | 160 A |
| RDS(on) max at VGS=10V | 40 mOhm | ~25 mOhm | ~60 mOhm | ~180 mOhm | ~4.5 mOhm | ~70 mOhm | ~6 mOhm |
| Power Dissipation (Tc=25C) | 300 W | 300 W | 180 W | 150 W | 470 W | 300 W | 310 W |
| Technology | HEXFET Planar N-Channel | HEXFET N-Channel (newer) | HEXFET N-Channel | HEXFET N-Channel | HEXFET N-Channel | MDmesh N-Channel | PowerTrench N-Channel |
| Avalanche Rated | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Unit Price (qty 1, USD approx) | 4.50 | ~5.20 | ~3.80 | ~2.50 | ~6.10 | ~5.50 | ~3.20 |
Key Differentiators
- Higher continuous drain current than IRFP250MPBF at the same 200V rating (vs IRFP250MPBF)
- Lower RDS(on) and higher power dissipation than IRFP240PBF (vs IRFP240PBF)
- Higher VDS rating with acceptable RDS(on) compared to low-voltage TO-247 alternatives (vs IRFP2907PBF)
- Mature HEXFET process technology with proven long-term reliability (vs STW45NM50)
Design Notes
Estimated: at 50A continuous drain current with RDS(on)=40 mOhm, the steady-state conduction loss reaches about 100W. The TO-247AC junction-to-case thermal resistance is approximately 0.5 C/W; with a 0.2 C/W case-to-heatsink interface, the total junction-to-heatsink resistance is 0.7 C/W. This means the heatsink-to-ambient resistance must remain below 0.4 C/W to keep junction temperature below 150C at 25C ambient. Always derate by 30% for industrial designs and use a thermal pad or mica insulator with thermal compound.
The TO-247AC is a through-hole package, so PCB layout focuses on minimizing loop inductance in the high-current path. Keep the gate drive loop (gate resistor + driver output to gate, and back to source) physically small, ideally under 1 cm total length. Place a 10 kOhm gate-source resistor directly across the gate and source pins to prevent Miller-effect turn-on. Use wide copper pours (at least 4 oz thickness) on the drain and source nets to handle 50A continuous current without significant PCB trace heating.
Common pitfalls when using the IRFP260MPBF include: (1) exceeding the 200V VDS rating during transformer reset or inductive flyback - always add a TVS or RC snubber sized for the worst-case unclamped energy; (2) forgetting the body diode reverse recovery in half-bridge configurations - check the trr rating against your switching frequency; (3) undersizing the gate drive voltage - the part is fully specified at VGS=10V, and operating at VGS=5V leaves significant RDS(on) headroom on the table; (4) mounting the heatsink without thermal compound - dry-mount can double the case-to-heatsink thermal resistance.
When using the IRFP260MPBF in a half-bridge or full-bridge configuration, minimize the high-side-to-low-side source inductance by returning the gate drive loop directly to the source pin, not to a remote ground. For switching frequencies above 50 kHz, add a small ferrite bead or gate resistor (10-47 Ohm) to dampen gate ringing. Keep the drain and source switching node away from sensitive analog circuits, as the high dV/dt of the TO-247AC MOSFET can inject substantial common-mode noise into adjacent traces.
Compliance Information
RoHS compliant and lead-free per Infineon product page. Not AEC-Q100 qualified - this part is intended for industrial power applications, not automotive. For automotive qualified alternatives, contact Infineon for their automotive-grade MOSFET line.
