IRFR1205TRPBF vs IRFR220NTRPBF Comparison

Detailed side-by-side comparison of IRFR1205TRPBF by Infineon and IRFR220NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR220NTRPBF IRFR220NTRPBF - 200V 5A N-Channel HEXFET MOSFET | Infineon

IRFR220NTRPBF - 200V 5A N-Channel HEXFET MOSFET | Infineon

IRFR220NTRPBF βœ“ Active

Specification Comparison

Parameter IRFR1205TRPBF IRFR220NTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.49 $0.22
FET Type N-Channel N-Channel MOSFET
Technology HEXFET (IR MOSFET, 5th generation) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) at TC=25C 44 A β€”
Pulsed Drain Current (IDM) 160 A [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max +/- 20 V β€”
Gate Threshold Voltage (VGS(th)) 2 V min, 4 V max [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) at VGS=10V 27 mOhm max β€”
Total Gate Charge (Qg) 43.3 nC 15 nC (typical per Mouser listing)
Power Dissition (PD) at TC=25C 107 W β€”
Operating Junction Temperature -55C to +175C -55Β°C to +150Β°C
Package TO-252AA (DPAK) TO-252AA (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant (PBF suffix = lead-free) Compliant (PBF suffix)
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen status] β€”
Drain-to-Source Voltage (VDS) β€” 200 V
Continuous Drain Current (ID) at TC=25Β°C β€” 5 A
Gate-to-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
On-Resistance Rds(on) max at VGS=10V β€” 600 milliohm
Maximum Power Dissition (PD) at TC=25Β°C β€” 43 W
MSL Level β€” 1 (unlimited floor life per JEDEC J-STD-020)
Avalanche Energy Rated β€” Yes (fully characterized)
Lead-Free β€” Yes (PBF suffix indicates Pb-free plating)

Datasheets & Resources

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