IRFR1205TRPBF - 55V N-Channel HEXFET MOSFET, 44A | Infineon
MPN: IRFR1205TRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.18 | $1.18 |
| 10 | $1.02 | $10.20 |
| 100 | $0.84 | $84.00 |
| 500 | $0.69 | $345.00 |
| 1,000 | $0.58 | $580.00 |
| 2,500 | $0.49 | $1,225.00 |
Drop-in alternatives for IRFR1205TRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFR1205TRPBF
✅ Drop-In✓ In Stock
$0.49 / Unit
View Datasheet →IRFR5410TRPBF
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View Datasheet →IRFR5305TRLPBF
✅ Drop-In✓ In Stock
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View Datasheet →NTD3055L104
✅ Drop-In📋 Reference alternative (not in catalog)
RFD3055LESM9A
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BSP88H6327XTSA1
✅ Drop-In✓ In Stock
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View Datasheet →IRFR1205TRPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | HEXFET (IR MOSFET, 5th generation) |
| Drain-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) at TC=25C | 44 A |
| Pulsed Drain Current (IDM) | 160 A |
| Gate-Source Voltage (VGS) max | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | 2 V min, 4 V max |
| On-Resistance RDS(on) at VGS=10V | 27 mOhm max |
| Total Gate Charge (Qg) | 43.3 nC |
| Power Dissition (PD) at TC=25C | 107 W |
| Operating Junction Temperature | -55C to +175C |
| Package | TO-252AA (DPAK) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant (PBF suffix = lead-free) |
IRFR1205TRPBF Pin Configuration
| Pin 1 | Gate — MOSFET gate control input |
| Pin 2 | Drain — Drain terminal (also electrically tied to metal tab) |
| Pin 3 | Source — Source terminal (return path for gate drive) |
Safe Operating Area (DC)
Typical Applications
IRFR1205TRPBF is suitable for 7 applications: Synchronous Rectification in DC-DC Buck Converters, 12V / 24V Brushed DC Motor Drive (Low-Side Switch), Battery Protection and Load Switch in 12-36V Systems, Solenoid and Relay Driver (PWM Control), LED Backlight Driving and High-Current LED Strings, Uninterruptible Power Supply (UPS) and Solar Charge Controllers, Automotive 12V Auxiliary Loads and Fan Control.
Synchronous Rectification in DC-DC Buck Converters
The IRFR1205TRPBF serves as the low-side synchronous rectifier in buck converters operating from 4.5V to 50V input rails. Its 27 mOhm RDS(on) at VGS=10V halves conduction loss versus a Schottky diode at currents above 5A, while the 43.3 nC total gate charge enables switching frequencies up to 500 kHz without excessive gate-drive loss. Compared to a Schottky it adds the dead-time control requirement but recovers much higher efficiency at heavy load. Use a low-side driver with adaptive dead-time to prevent shoot-through.
Recommended
12V / 24V Brushed DC Motor Drive (Low-Side Switch)
As a low-side switch for brushed DC motors up to 30A continuous, the IRFR1205TRPBF handles 12V and 24V bus voltages comfortably within its 55V VDS rating. The 44A continuous ID rating provides a ~1.5x margin above typical motor stall currents, and the 160A pulsed rating absorbs motor-start inrush transients. Driven from a logic-level gate driver, it offers clean switching for PWM speed control. Trade-off: low-side topology floats the motor, so use an isolated gate driver if chassis grounding is required.
Recommended
Battery Protection and Load Switch in 12-36V Systems
The IRFR1205TRPBF acts as a low-RDS(on) load switch or reverse-battery disconnect in 12V/24V/36V battery systems. With VDS rated to 55V and continuous ID up to 44A, it can switch entire battery packs without an electromechanical relay, and its body diode provides inherent free-wheeling during switch transitions. Designers use it inside BMS boards where a low-resistance disconnect is needed for short-circuit protection; pair it with a current-sense amplifier for accurate cutoff.
Recommended
Solenoid and Relay Driver (PWM Control)
Driving solenoids, valves, and electromechanical relays at 12-24V, the IRFR1205TRPBF offers low conduction loss and 160A avalanche-rated pulse handling for flyback energy at turn-off. Adding a flyback diode reduces switching loss, but the intrinsic body diode handles brief transients if a discrete diode is omitted for BOM savings. Use a 10V gate drive to reach the datasheet's 27 mOhm RDS(on); logic-level (4.5V) drive roughly doubles RDS(on) and dissipation.
Recommended
LED Backlight Driving and High-Current LED Strings
In high-brightness LED driving applications (automotive lighting, signage backlight), the IRFR1205TRPBF is used as a low-side linear current sink or PWM dimmer for LED strings drawing 1-30 A. Its low RDS(on) keeps dissipation manageable even at high currents - for example, 10A through 27 mOhm dissipates only 2.7W. A thermistor-controlled gate drive or current-feedback op-amp maintains LED brightness uniformity across temperature, taking advantage of the MOSFET's wide -55C to +175C junction range.
Recommended
Uninterruptible Power Supply (UPS) and Solar Charge Controllers
Inside low-voltage UPS, solar charge controller, and battery-backup designs, the IRFR1205TRPBF handles 24V bus switching with low loss. Its 55V VDS rating tolerates 36V telecom-bus transients, and its avalanche-rated single-pulse current absorbs inductive kick from transformers during abnormal events. Compared to a relay, it switches faster (microseconds), eliminating relay-bounce and acoustic noise. Use it in combination with an MCU-controlled gate driver for soft-start to limit inrush current at power-up.
Recommended
Automotive 12V Auxiliary Loads and Fan Control
For automotive 12V auxiliary loads such as HVAC blowers, fuel pumps, and cooling fans drawing 5-30A, the IRFR1205TRPBF provides a robust low-side switch that survives crank-start transients up to ~36V within its 55V margin. Its 160A pulsed drain current handles the inrush of motor startup, and its -55C to +175C junction range covers underhood environments. Pair with an automotive-grade gate driver (e.g. Infineon TLE4275 family) for reverse-battery and load-dump protection.
Recommended
Recommended Products Summary
Engineering reference data for IRFR1205TRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFR5410TRPBF | IRFR5305TRPBF | NTD3055L104 | RFD3055LESM9A | BSP88H6327XTSA1 |
|---|---|---|---|---|---|---|
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Brand | Infineon | Infineon | Infineon | onsemi | onsemi | Infineon |
| Channel Polarity | N-Channel | N-Channel | P-Channel (opposite) | N-Channel | N-Channel | N-Channel |
| Drain-Source Voltage VDS | 55 V | 100 V | 55 V | 60 V | 60 V | 240 V |
| Continuous Drain Current ID | 44 A | 33 A | 31 A | 12 A | 10 A | 0.35 A |
| On-Resistance RDS(on) at VGS=10V | 27 mOhm max | 65 mOhm max | 65 mOhm max | 40 mOhm typ | 40 mOhm typ | 8 Ohm max |
| Total Gate Charge Qg | 43.3 nC | 71 nC | 63 nC | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation PD at TC=25C | 107 W | 130 W | 110 W | [DATA_NEEDED] | [DATA_NEEDED] | 1.8 W |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes | Yes |
| Unit Price (qty 1, USD) | 1.18 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Lowest RDS(on) per mm^2 in 55V DPAK class from Infineon (vs IRFR5410TRPBF)
- Wide -55C to +175C junction operating range (vs NTD3055L104 (onsemi))
- Fifth-generation HEXFET process with optimized switching speed (vs BSP88H6327XTSA1 (240V Infineon part))
Design Notes
Estimated: at continuous 44A in free air with 1 oz copper pad (~100 mm^2 DPAK footprint), junction-to-ambient theta_JA is roughly 50-62 C/W. Power dissipation P = ID^2 * RDS(on) * Rth normalization. For a typical 12V/30A motor drive with 27 mOhm, P = 30^2 * 0.027 = 24.3 W worst-case, yielding a junction rise of 24.3 * 50 = 1215C above ambient - clearly exceeds thermal limits. Therefore: (1) drive the gate to 10V for full RDS(on) spec; (2) increase PCB copper area to at least 300 mm^2 (reduces theta_JA to ~35 C/W); (3) limit continuous current to ~15A in 50C ambient without external heatsink.
Place the gate-driver as close as possible to the gate pin to minimize parasitic inductance in the gate-source loop. Use a 10-100 Ohm gate resistor (value chosen for switching-speed vs EMI trade-off) and a 100 kohm pull-down on the gate to ensure defined off-state if the driver is tri-stated. The DPAK tab is internally tied to the drain - keep the drain copper pour on the top layer to maximize heatsinking and minimize source-loop inductance.
Critical pitfalls: (1) Driving the gate with only 4.5V (logic-level) roughly doubles RDS(on), negating the benefit of using this part over a cheaper logic-level MOSFET. (2) Exceeding the +/- 20V VGS(max) absolute rating destroys the gate oxide - verify the gate-driver supply and any transients from the gate-driver bootstrap. (3) Forgetting the body diode's reverse-recovery charge (Qrr) when designing hard-switched bridges - the IRFR1205 is best in soft-switched or low-frequency applications; at high frequencies pair with a Schottky anti-parallel diode. (4) Reverse-mounting the DPAK tab under high voltage - the tab is the drain, so PCB clearance matters.
For switching-converter applications, the IRFR1205TRPBF's 43.3 nC Qg must be supplied by the gate driver every switching cycle. At 200 kHz, average gate-drive current = Qg * fsw = 43.3 nC * 200 kHz = 8.7 mA average. Choose a gate driver capable of 1A peak (for fast rise/fall) and 10 mA average; discrete push-pull BJT/MOSFET drivers or Infineon's EiceDriver family are common picks. Dead-time in synchronous-buck topologies should be 30-100 ns to balance shoot-through risk vs body-diode conduction.
Compliance Information
RoHS and REACH compliant per Infineon PBF suffix. Not AEC-Q100 qualified - commercial/industrial grade. Halogen-free status not specified in verified web data.
