IRFR1205TRPBF vs IRFR220NTRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFR1205TRPBF sa pamamagitan ng Infineon at IRFR220NTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFR1205TRPBF | IRFR220NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET, 5th generation) | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC=25C | 44 A | — |
| Pulsed Drain Current (IDM) | 160 A | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2 V min, 4 V max | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance RDS(on) at VGS=10V | 27 mOhm max | — |
| Total Gate Charge (Qg) | 43.3 nC | 15 nC (typical per Mouser listing) |
| Power Dissition (PD) at TC=25C | 107 W | — |
| Temperature ng Junction na Operasyon | -55C to +175C | -55°C to +150°C |
| Packhaging | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant (PBF suffix = lead-free) | Compliant (PBF suffix) |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen status] | — |
| Drain-to-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TC=25°C | — | 5 A |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| On-Resistance Rds(on) max at VGS=10V | — | 600 milliohm |
| Maximum Power Dissition (PD) at TC=25°C | — | 43 W |
| Level ng MSL | — | 1 (unlimited floor life per JEDEC J-STD-020) |
| Avalanche Energy Rated | — | Yes (fully characterized) |
| Lead-Free | — | Yes (PBF suffix indicates Pb-free plating) |