IRFR3504ZTRPBF vs IRFR3607TRPBF Comparison

Detailed side-by-side comparison of IRFR3504ZTRPBF by Infineon and IRFR3607TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR3504ZTRPBF IRFR3607TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.28 $0.39
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, TC=25°C) 42 A —
Continuous Drain Current (ID, TC=100°C) [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed] —
On-Resistance RDS(on) max @ VGS=10V 9 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th) typ) 1.8 V (logic-level) —
Total Gate Charge (Qg) typ 30 nC —
Power Dissipation (PD) at TC=25°C 90 W —
Operating Junction Temperature -55°C to +175°C —
Package TO-252AA (DPAK) surface mount TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Technology HEXFET (N-Channel Silicon MOSFET) IR HEXFET (planar DMOS)
RoHS Status Compliant —
MSL Level 1 (unlimited) —
Avalanche Rated Yes (improved repetitive avalanche rating) —
Polarity / Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID, Tc) — 56 A
Calculated Die Drain Current — 80 A
On-State Resistance (RDS(on)) — 9 mOhm @ VGS=10V, ID=46A
Gate Threshold Voltage (VGS(th)) — 4 V
Total Gate Charge (Qg) — 56 nC
Gate-to-Source Voltage (VGS) Max — +/-20 V
Power Dissipation (PD, Tc) — 140 W
Thermal Resistance (RthJC) — 1.0 C/W
Operating Temperature Range — -55C to +175C (TJ max 175C per datasheet convention)
Avalanche SOA — Fully characterized
RoHS / Lead-Free — Compliant / Pb-free (PBF suffix, JESD-609 e3)

Datasheets & Resources

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