IRFR3504ZTRPBF vs IRFR3607TRPBF 비교
다음의 상세 나란히 비교: IRFR3504ZTRPBF 제조: Infineon 및 IRFR3607TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFR3504ZTRPBF | IRFR3607TRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.28 | $0.39 |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, TC=25°C) | 42 A | — |
| Continuous Drain Current (ID, TC=100°C) | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed] | — |
| On-Resistance RDS(on) max @ VGS=10V | 9 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th) typ) | 1.8 V (logic-level) | — |
| Total Gate Charge (Qg) typ | 30 nC | — |
| Power Dissipation (PD) at TC=25°C | 90 W | — |
| 동작 접합 온도 | -55°C to +175°C | — |
| 패키지 | TO-252AA (DPAK) surface mount | TO-252AA (DPAK) |
| 실장 유형 | Surface Mount | Surface Mount |
| Technology | HEXFET (N-Channel Silicon MOSFET) | IR HEXFET (planar DMOS) |
| RoHS 상태 | Compliant | — |
| MSL 레벨 | 1 (unlimited) | — |
| Avalanche Rated | Yes (improved repetitive avalanche rating) | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID, Tc) | — | 56 A |
| Calculated Die Drain Current | — | 80 A |
| On-State Resistance (RDS(on)) | — | 9 mOhm @ VGS=10V, ID=46A |
| Gate Threshold Voltage (VGS(th)) | — | 4 V |
| Total Gate Charge (Qg) | — | 56 nC |
| Gate-to-Source Voltage (VGS) Max | — | +/-20 V |
| Power Dissipation (PD, Tc) | — | 140 W |
| Thermal Resistance (RthJC) | — | 1.0 C/W |
| 동작 온도 범위 | — | -55C to +175C (TJ max 175C per datasheet convention) |
| Avalanche SOA | — | Fully characterized |
| RoHS / Lead-Free | — | Compliant / Pb-free (PBF suffix, JESD-609 e3) |