IRFR5505TRPBF vs IRFR6215TRLPBF Perbandingan

Perbandingan bersamaan detil IRFR5505TRPBF dari Infineon dan IRFR6215TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR5505TRPBF IRFR6215TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Series HEXFET —
Polarity P-Channel P-Channel
Technology IR MOSFET (HEXFET 5th generation) HEXFET Power MOSFET (Fifth Generation)
Drain-Source Voltage (VDS) max -55 V —
Continuous Drain Current (ID) at TC=25C -18 A —
Pulsed Drain Current (IDM) -72 A [DATA_NEEDED: pulsed drain current value]
Gate-Source Voltage (VGS) max +/-20 V ±20 V
On-Resistance RDS(on) max at VGS=-10V 110 mOhm —
Total Gate Charge (Qg) 21.3 nC —
Gate-Source Charge (Qgs) [DATA_NEEDED: Qgs] —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Rise Time (tr) [DATA_NEEDED: tr] —
Fall Time (tf) [DATA_NEEDED: tf] —
Maximum Power Dissipation (PD) at TC=25C 57 W —
Suhu Hubung Kerja -55 C to +175 C —
Thermal Resistance Junction-to-Case (RthJC) 2.2 C/W —
Thermal Resistance Junction-to-Ambient (RthJA) 50 C/W (typical, DPAK on 1 oz copper) —
Paket TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant (PBF suffix) Compliant
Lead-Free Yes (PBF suffix) Yes
Drain-Source Voltage (VDS) — -150 V
Continuous Drain Current (ID) at Tc=25C — -13 A
RDS(on) max at VGS=-10V — 580 mOhm
Total Gate Charge (Qg) typ — 44 nC
Power Dissipation (PD) at Tc=25C — 110 W
Maximum Operating Junction Temperature — 175 C
Level MSL — 1

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