IRFS3006TRL7PP vs IRFS3107TRL7PP Comparison
Detailed side-by-side comparison of IRFS3006TRL7PP by Infineon and IRFS3107TRL7PP by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFS3006TRL7PP - 60V 240A N-Ch HEXFET MOSFET | D2PAK-7 | Infineon
IRFS3006TRL7PP β ActiveSpecification Comparison
| Parameter | IRFS3006TRL7PP | IRFS3107TRL7PP |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.75 | $0.85 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | HEXFET (IR MOSFETβ’ planar) | IR HEXFET (Planar DMOS) |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Tc | 240 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current rating] | β |
| On-Resistance RDS(on) max | 2.1 mΞ© (per Mouser snippet) | β |
| On-Resistance RDS(on) typ | 1.5 mΞ© | β |
| Gate Charge (Qg) | 200 nC (typical) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical range] |
| Power Dissipation (PD) at Tc | 375 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | D2PAK (TO-263), 7-Lead, Surface Mount | D2PAK-7 (TO-263CB, 6 leads + tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Body Diode | Intrinsic, avalanche-rated | β |
| MSL Level | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Avalanche Energy (EAS) | [DATA_NEEDED: single-pulse avalanche energy] | β |
| RΞΈJC Thermal Resistance | [DATA_NEEDED: junction-to-case thermal resistance] | β |
| FET Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | β | 75 V |
| Continuous Drain Current (ID) @ Tc=25C | β | 240 A (DigiKey) / 195 A (per package datasheet snippet) |
| Pulsed Drain Current | β | [DATA_NEEDED: pulsed ID] |
| RDS(on) Max @ VGS=10V | β | 3 mOhm (Infineon) / 2.6 mOhm (Mouser) |
| Gate Charge (Qg) Typical | β | 160 nC |
| Maximum Power Dissition @ Tc=25C | β | 370 W |
| Operating Temperature Range | β | -55C to +175C (junction) |
| Lead-Free | β | Yes |