IRFS3006TRL7PP vs IRFS3107TRL7PP Comparación
Comparación detallada lado a lado de IRFS3006TRL7PP por Infineon y IRFS3107TRL7PP por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFS3006TRL7PP | IRFS3107TRL7PP |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,75 | $0,85 |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET™ planar) | IR HEXFET (Planar DMOS) |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc | 240 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current rating] | — |
| On-Resistance RDS(on) max | 2.1 mΩ (per Mouser snippet) | — |
| On-Resistance RDS(on) typ | 1.5 mΩ | — |
| Gate Charge (Qg) | 200 nC (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical range] |
| Power Dissipation (PD) at Tc | 375 W | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | D2PAK (TO-263), 7-Lead, Surface Mount | D2PAK-7 (TO-263CB, 6 leads + tab) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Body Diode | Intrinsic, avalanche-rated | — |
| Nivel MSL | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| Estado RoHS | Compliant | Compliant |
| Avalanche Energy (EAS) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| RθJC Thermal Resistance | [DATA_NEEDED: junction-to-case thermal resistance] | — |
| FET Type | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 75 V |
| Continuous Drain Current (ID) @ Tc=25C | — | 240 A (DigiKey) / 195 A (per package datasheet snippet) |
| Corriente de drenador pulsada | — | [DATA_NEEDED: pulsed ID] |
| RDS(on) Max @ VGS=10V | — | 3 mOhm (Infineon) / 2.6 mOhm (Mouser) |
| Gate Charge (Qg) Typical | — | 160 nC |
| Maximum Power Dissition @ Tc=25C | — | 370 W |
| Rango de temperatura de funcionamiento | — | -55C to +175C (junction) |
| Lead-Free | — | Yes |