IRFS3006TRLPBF vs IRF7854TRPBF Perbandingan

Perbandingan bersamaan detil IRFS3006TRLPBF dari Infineon dan IRF7854TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFS3006TRLPBF IRF7854TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) — $0,48
FET Type N-Channel N-Channel
Technology IR HEXFET (Planar DMOS) HEXFET (planar N-channel)
Drain-Source Voltage (Vds) 60 V —
Continuous Drain Current (Id) at Tc=25C 195 A —
Pulsed Drain Current (Idm) 270 A —
On-Resistance Rds(on) max at Vgs=10V 2.5 mOhm —
Gate-Source Threshold Vgs(th) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 200 nC —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd value] —
Power Dissipation (Pd) at Tc=25C 375 W —
Suhu Hubung Kerja -55 C to +175 C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value] —
Paket D2PAK (TO-263AB), surface mount SO-8
Tipe Mounting Surface Mount Surface Mount
RoHS Compliance Lead-Free (Pb-Free), RoHS Compliant —
Level MSL 1 —
Avalanche Energy Rating Avalanche rated (per Infineon datasheet) —
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at Ta=25°C — 10 A
Power Dissipation (PD) at Ta=25°C — 2.5 W
On-Resistance RDS(on) max at VGS=10V — 13.4 mΩ
Gate-Source Threshold Voltage VGS(th) max — 4.9 V
Total Gate Charge Qg — 27 nC
Rentang Suhu Kerja — -55°C to +150°C (TJ)
Lead-Free / RoHS — Yes (PBF suffix, lead-free)
Qualification — JEDEC industrial, Normal level
Solder Process — Reflow and wave-solderable
Gate Drive Voltage (recommended) — 10 V

Spek dan Sumber

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