IRFS3107TRL7PP vs IRFS3006TRL7PP Comparison
Detailed side-by-side comparison of IRFS3107TRL7PP by Infineon and IRFS3006TRL7PP by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFS3006TRL7PP - 60V 240A N-Ch HEXFET MOSFET | D2PAK-7 | Infineon
IRFS3006TRL7PP β ActiveSpecification Comparison
| Parameter | IRFS3107TRL7PP | IRFS3006TRL7PP |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.85 | $1.75 |
| FET Type | N-Channel MOSFET | β |
| Technology | IR HEXFET (Planar DMOS) | HEXFET (IR MOSFETβ’ planar) |
| Drain-Source Voltage (VDS) Max | 75 V | β |
| Continuous Drain Current (ID) @ Tc=25C | 240 A (DigiKey) / 195 A (per package datasheet snippet) | β |
| Pulsed Drain Current | [DATA_NEEDED: pulsed ID] | β |
| RDS(on) Max @ VGS=10V | 3 mOhm (Infineon) / 2.6 mOhm (Mouser) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical range] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Gate Charge (Qg) Typical | 160 nC | β |
| Maximum Power Dissition @ Tc=25C | 370 W | β |
| Operating Temperature Range | -55C to +175C (junction) | β |
| Package | D2PAK-7 (TO-263CB, 6 leads + tab) | D2PAK (TO-263), 7-Lead, Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at Tc | β | 240 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current rating] |
| On-Resistance RDS(on) max | β | 2.1 mΞ© (per Mouser snippet) |
| On-Resistance RDS(on) typ | β | 1.5 mΞ© |
| Gate Charge (Qg) | β | 200 nC (typical) |
| Power Dissipation (PD) at Tc | β | 375 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Body Diode | β | Intrinsic, avalanche-rated |
| Avalanche Energy (EAS) | β | [DATA_NEEDED: single-pulse avalanche energy] |
| RΞΈJC Thermal Resistance | β | [DATA_NEEDED: junction-to-case thermal resistance] |