IRFS3107TRL7PP vs IRFS3006TRL7PP Comparación
Comparación detallada lado a lado de IRFS3107TRL7PP por Infineon y IRFS3006TRL7PP por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFS3107TRL7PP | IRFS3006TRL7PP |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,85 | $1,75 |
| FET Type | N-Channel MOSFET | — |
| Technology | IR HEXFET (Planar DMOS) | HEXFET (IR MOSFET™ planar) |
| Drain-Source Voltage (VDS) Max | 75 V | — |
| Continuous Drain Current (ID) @ Tc=25C | 240 A (DigiKey) / 195 A (per package datasheet snippet) | — |
| Corriente de drenador pulsada | [DATA_NEEDED: pulsed ID] | — |
| RDS(on) Max @ VGS=10V | 3 mOhm (Infineon) / 2.6 mOhm (Mouser) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical range] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Gate Charge (Qg) Typical | 160 nC | — |
| Maximum Power Dissition @ Tc=25C | 370 W | — |
| Rango de temperatura de funcionamiento | -55C to +175C (junction) | — |
| Encapsulado | D2PAK-7 (TO-263CB, 6 leads + tab) | D2PAK (TO-263), 7-Lead, Surface Mount |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 240 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current rating] |
| On-Resistance RDS(on) max | — | 2.1 mΩ (per Mouser snippet) |
| On-Resistance RDS(on) typ | — | 1.5 mΩ |
| Gate Charge (Qg) | — | 200 nC (typical) |
| Power Dissipation (PD) at Tc | — | 375 W |
| Temperatura de unión de funcionamiento | — | -55 °C to +175 °C |
| Body Diode | — | Intrinsic, avalanche-rated |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: single-pulse avalanche energy] |
| RθJC Thermal Resistance | — | [DATA_NEEDED: junction-to-case thermal resistance] |