IRFS4321TRLPBF vs IRFS4620TRLPBF 比較
詳細並排比較 IRFS4321TRLPBF 由 Infineon 與 IRFS4620TRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFS4321TRLPBF | IRFS4620TRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 150 V | 200 V |
| Continuous Drain Current (ID) at Tc=25C | 85 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) Max at VGS=10V | 15 mOhm | — |
| RDS(on) Max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-to-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) Typ | 71 nC | — |
| Total Gate Charge (Qg) Max | 110 nC | — |
| Power Dissipation (PD) at Tc=25C | 350 W | — |
| Thermal Resistance Junction-to-Case (RθJC) Max | 0.45 C/W | — |
| Thermal Resistance Junction-to-Case (RθJC) End-of-Life | 0.65 C/W (after 1000 cycles -55C to +150C) | — |
| 工作接面溫度 | -55C to +175C | -55°C to +175°C |
| 封裝 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB), 3-pin (2 leads + tab) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | IR HEXFET (IR MOSFET) | IR MOSFET™ |
| RoHS 狀態 | Compliant | Compliant |
| Continuous Drain Current (ID) at TC=25°C | — | 24 A |
| On-Resistance RDS(on) max at VGS=10V | — | 77.5 mΩ |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Total Gate Charge Qg | — | 25 nC (typical) |
| Gate-to-Source Charge Qgs | — | [DATA_NEEDED: Qgs] |
| Gate-to-Drain Charge Qgd | — | [DATA_NEEDED: Qgd] |
| Power Dissipation PD at TC=25°C | — | 144 W |
| Lead-Free | — | Yes |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |