IRFS4620TRLPBF - 200V 24A N-Channel MOSFET | Infineon
MPN: IRFS4620TRLPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.52 | $25.20 |
| 100 | $2.18 | $218.00 |
| 500 | $1.86 | $930.00 |
| 1,000 | $1.62 | $1,620.00 |
Drop-in alternatives for IRFS4620TRLPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFS4620PBF
✅ Drop-In📋 Reference alternative (not in catalog)
STB24NF20
✅ Drop-In📋 Reference alternative (not in catalog)
IRFS4321TRLPBF
✅ Drop-In✓ In Stock
$1.73 / Unit
View Datasheet →IRFS4620TRLPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) at TC=25°C | 24 A |
| On-Resistance RDS(on) max at VGS=10V | 77.5 mΩ |
| Total Gate Charge Qg | 25 nC (typical) |
| Power Dissipation PD at TC=25°C | 144 W |
| Operating Junction Temperature | -55°C to +175°C |
| Package | D2PAK (TO-263AB), 3-pin (2 leads + tab) |
| Mounting Type | Surface Mount |
| Technology | IR MOSFET™ |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| MSL Level | 1 (per JEDEC J-STD-020) |
IRFS4620TRLPBF Pin Configuration
| Pin 1 | Gate — Gate control input; drive with 10V nominal VGS (±20V maximum) |
| Pin 2 | Drain (Tab) — Drain connection; the metal tab is electrically connected to pin 2 and serves as the primary thermal dissipation path |
| Pin 3 | Source — Source connection; reference for gate drive voltage |
Safe Operating Area (DC)
Typical Applications
IRFS4620TRLPBF is suitable for 6 applications: High-Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply (UPS) Output Stage, PFC Boost Converter, DC-DC Converter for 48V Telecom Buses, Motor Drive H-Bridge (Low-Voltage, High-Current), Battery Management and High-Side Switching.
High-Efficiency Synchronous Rectification in SMPS
The IRFS4620TRLPBF is purpose-built for synchronous rectification in switched-mode power supplies, particularly on the secondary side of forward, half-bridge, and full-bridge topologies. Its 200V VDS rating tolerates reflected voltage transients from the transformer plus inductive ringing, while the 77.5 mΩ RDS(on) at VGS=10V keeps conduction loss low at high output currents. The 25 nC total gate charge enables switching frequencies of 100–250 kHz without excessive driver loss. Compared to using a Schottky diode, the synchronous MOSFET reduces rectifier loss by a factor of 5–10×, directly improving overall SMPS efficiency by 1–3 percentage points at full load. Designers typically pair it with a dedicated high-side/low-side gate driver such as the IR2110 or UCC27714 in 500W–3kW power supplies.
Recommended
Uninterruptible Power Supply (UPS) Output Stage
In UPS output stages the IRFS4620TRLPBF serves as the main inverter switch or as the battery-side chopper element. The 200V breakdown comfortably covers 48V battery systems and 96V/120V DC-link rails, and the 24A continuous drain current (with proper heatsinking) supports 1–2 kVA UPS designs. The avalanche-rated body diode protects against the back-EMF generated when the inverter drives inductive loads, while the IR MOSFET™ process gives robust short-circuit withstand capability—an essential trait when the UPS suddenly switches from grid to battery mode. For 5 kVA systems, parallel two or three IRFS4620TRLPBF devices with source-side ballast resistors to balance current sharing.
Recommended
PFC Boost Converter
The IRFS4620TRLPBF is well suited as the boost switch in power-factor-correction (PFC) front-end converters up to about 3 kW. In a continuous-conduction-mode (CCM) PFC boost running from 85–264 VAC input with a 400 VDC output, the MOSFET sees roughly 450V peak transient stress during line surges and zero-cross events—the 200V rating is therefore only appropriate for low-voltage PFC stages (e.g., 120V/240V PFC). The 25 nC Qg keeps drive losses manageable at 50–100 kHz switching frequency, and the low RDS(on) reduces conduction loss during the long on-time near the AC peak. Use a dedicated PFC controller such as the UCC28019A or NCP1654.
Recommended
DC-DC Converter for 48V Telecom Buses
In 48V telecom isolated DC-DC converters (e.g., quarter-brick or eighth-brick modules), the IRFS4620TRLPBF can serve as the primary-side switch on the 48V rail side of a full-bridge or push-pull topology. The 200V VDS rating provides a 4× safety margin over the 48V nominal bus and absorbs leakage-inductance spikes from the isolation transformer. At 48V input and 200 kHz switching, the 24A continuous current rating supports converters delivering roughly 500–700W of output power per MOSFET pair. The D2PAK package's low thermal resistance simplifies thermal design in the densely-packed brick format.
Recommended
Motor Drive H-Bridge (Low-Voltage, High-Current)
For low-voltage DC motor drives in the 24V–96V range, the IRFS4620TRLPBF can be used in the half-bridge or H-bridge output stage. The 200V VDS gives generous margin for back-EMF from the motor inductance, and the 24A continuous current rating (with proper heatsinking) supports motors up to roughly 1.5 kW. Use it with a dedicated gate driver such as the IRS2109STRPBF or IR21064STRPBF for high-side/low-side drive, and add external Schottky flyback diodes if the switching frequency exceeds 30 kHz. The IR MOSFET™ process provides robust avalanche capability to absorb the motor's regenerative braking energy.
Recommended
Battery Management and High-Side Switching
In battery management systems and high-side load switches, the IRFS4620TRLPBF serves as the main disconnect or load-dump switch for 24V–100V battery packs. The 200V VDS protects against load-dump transients on automotive and industrial 24V buses, while the 77.5 mΩ RDS(on) keeps voltage drop below 200 mV at 3A continuous load—important for accurate battery monitoring. The IR MOSFET™ process is rated for repetitive avalanche, so inductive loads such as solenoids and relays can be switched without external TVS protection. For a fully integrated battery management IC, pair it with companion parts like the TLE9012AQUXUMA2 or similar battery monitoring ICs.
Recommended
Recommended Products Summary
Engineering reference data for IRFS4620TRLPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFS4620PBF | STB24NF20 | IRFS4321TRLPBF |
|---|---|---|---|---|
| Package | D2PAK (TO-263AB) | D2PAK (TO-263AB) - same | D2PAK (TO-263) - same | D2PAK (TO-263AB) - same |
| Brand | Infineon | Infineon | STMicroelectronics | Infineon |
| Drain-to-Source Voltage VDS | 200 V | 200 V | 200 V | 150 V |
| Continuous Drain Current ID (TC=25°C) | 24 A | 24 A | 24 A | 180 A (much higher) |
| RDS(on) max at VGS=10V | 77.5 mΩ | 77.5 mΩ | ~100 mΩ | ~3.5 mΩ |
| Total Gate Charge Qg | 25 nC | 25 nC | [DATA_NEEDED] | ~150 nC |
| Power Dissipation PD | 144 W | 144 W | ~120 W | 300 W |
| Packaging Format | Tape & Reel (TRLPBF) | Tube (PBF) | Tape & Reel | Tape & Reel |
Key Differentiators
- Optimized balance of VDS rating and RDS(on) for 100–200V SMPS (vs STB24NF20 (STMicroelectronics))
- IR MOSFET™ technology with avalanche-rated body diode (vs IRFS4321TRLPBF (Infineon, 150V/180A class))
- Tape-and-reel packaging optimized for SMT production (vs IRFS4620PBF (Infineon, tube))
Design Notes
Estimated: at ID=20A continuous and RDS(on)=77.5 mΩ, conduction loss is approximately I²R = 20² × 0.0775 = 31 W per device. The D2PAK (TO-263AB) package typically exhibits θJA in the 40–50°C/W range when mounted on a 1-square-inch copper pour at the tab. Therefore junction temperature rise is roughly 31 W × 45°C/W = 1,395°C/W above ambient—well above 175°C. Designers must either reduce current to 12–15A continuous at 100°C ambient, or substantially increase the copper area / add an external heatsink. For sustained 20A operation, plan for at least 3–4 square inches of copper and forced-air cooling.
Solder the D2PAK tab directly to a large copper pour that doubles as both the drain connection and the primary heat-spreader. Place gate-drive components (gate resistor, gate-source pull-down) within 10 mm of the gate pin to minimize parasitic inductance. Keep the high-current source and drain loops physically small to control ringing and EMI. Use multiple thermal vias under the tab to conduct heat into inner-layer copper planes; a 3×3 array of 0.3 mm vias is a typical starting point for moderate-power designs.
Do not exceed the maximum VGS of ±20V; a 12V zener clamp from gate to source is good engineering practice for protection against transient spikes on the gate-drive path. Do not rely on the body diode for sustained high-frequency rectification—it has higher forward voltage and slower reverse recovery than a Schottky or synchronous-FET. In half-bridge or full-bridge topologies, ensure adequate dead-time (typically 200–500 ns) to prevent shoot-through. Finally, do not omit the gate-source resistor (typically 10 kΩ) used to hold the MOSFET off during power-up when the gate driver is in high-impedance state.
Compliance Information
RoHS compliant per Infineon product page. Lead-free per PBF suffix. Not AEC-Q100 qualified—use automotive-grade Infineon parts such as IPD90N06S407ATMA2 if automotive qualification is required. Halogen-free status not explicitly stated in the provided web data.
