IRFS4321TRLPBF vs IRL540NSTRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFS4321TRLPBF sa pamamagitan ng Infineon at IRL540NSTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFS4321TRLPBF | IRL540NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Drain-to-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at Tc=25C | 85 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) Max at VGS=10V | 15 mOhm | — |
| RDS(on) Max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-to-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) Typ | 71 nC | — |
| Total Gate Charge (Qg) Max | 110 nC | — |
| Power Dissipation (PD) at Tc=25C | 350 W | — |
| Thermal Resistance Junction-to-Case (RθJC) Max | 0.45 C/W | — |
| Thermal Resistance Junction-to-Case (RθJC) End-of-Life | 0.65 C/W (after 1000 cycles -55C to +150C) | — |
| Temperature ng Junction na Operasyon | -55C to +175C | — |
| Packhaging | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263 (D2PAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | IR HEXFET (IR MOSFET) | — |
| Tindminan RoHS | Compliant | Compliant (LPBF suffix indicates lead-free) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc=25°C | — | 36 A |
| On-Resistance (RDS(on)) max @ VGS=10V | — | 44 mΩ |
| On-Resistance (RDS(on)) max @ VGS=5V | — | [DATA_NEEDED: RDS(on) at VGS=5V] |
| Gate-Source Voltage (VGS) max | — | ±16 V |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level |
| Total Gate Charge (Qg) | — | 49.3 nC |
| Power Dissipation (PD) at Tc=25°C | — | 140 W |
| Power Dissipation (PD) at TA=25°C | — | 3.8 W |
| Hanay ng Temperature na Operasyon | — | -55°C to +175°C |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Level ng MSL | — | [DATA_NEEDED: MSL rating] |