IRFS4321TRLPBF vs IRL540NSTRLPBF Perbandingan

Perbandingan bersamaan detil IRFS4321TRLPBF dari Infineon dan IRL540NSTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFS4321TRLPBF IRL540NSTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET, Metal Oxide N-Channel
Drain-to-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) at Tc=25C 85 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
RDS(on) Max at VGS=10V 15 mOhm —
RDS(on) Max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-to-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) Typ [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) Typ 71 nC —
Total Gate Charge (Qg) Max 110 nC —
Power Dissipation (PD) at Tc=25C 350 W —
Thermal Resistance Junction-to-Case (RθJC) Max 0.45 C/W —
Thermal Resistance Junction-to-Case (RθJC) End-of-Life 0.65 C/W (after 1000 cycles -55C to +150C) —
Suhu Hubung Kerja -55C to +175C —
Paket TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263 (D2PAK)
Tipe Mounting Surface Mount Surface Mount
Technology IR HEXFET (IR MOSFET) —
Status RoHS Compliant Compliant (LPBF suffix indicates lead-free)
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc=25°C — 36 A
On-Resistance (RDS(on)) max @ VGS=10V — 44 mΩ
On-Resistance (RDS(on)) max @ VGS=5V — [DATA_NEEDED: RDS(on) at VGS=5V]
Gate-Source Voltage (VGS) max — ±16 V
Gate Threshold Voltage (VGS(th)) — Logic-level
Total Gate Charge (Qg) — 49.3 nC
Power Dissipation (PD) at Tc=25°C — 140 W
Power Dissipation (PD) at TA=25°C — 3.8 W
Rentang Suhu Kerja — -55°C to +175°C
Avalanche Energy Rated — Yes (single-pulse)
Level MSL — [DATA_NEEDED: MSL rating]

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