IRFS52N15DPBF vs IRFS52N15DTRLP Comparison
Detailed side-by-side comparison of IRFS52N15DPBF by Infineon and IRFS52N15DTRLP by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFS52N15DPBF | IRFS52N15DTRLP |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.15 | $1.62 |
| FET Type | N-Channel | N-Channel MOSFET |
| Technology | HEXFET (Planar Cell) | HEXFET (Planar) |
| Drain-Source Voltage (VDS) | 150 V | β |
| Continuous Drain Current (ID) @ TC=25C | 51 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | β |
| RDS(on) max @ VGS=10V | 32 mOhm | β |
| Total Gate Charge (Qg) | 60 nC (typical) | [DATA_NEEDED: total gate charge in nC] |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | β |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | [DATA_NEEDED: Ciss in pF] |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | β |
| Power Dissipation (PD) @ TA=25C | 3.8 W | β |
| Power Dissipation (PD) @ TC=25C | 230 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | D2PAK (TO-263) Surface Mount | D2PAK (TO-263) surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification Standard | JEDEC | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, typical for D2PAK) |
| Lead-Free | Yes | β |
| RoHS Status | Compliant | Compliant |
| Drain-to-Source Voltage (Vdss) | β | 150 V |
| Continuous Drain Current (Id) @ TC = 25 C | β | 51 A (Tc) |
| Continuous Drain Current (Id) @ TC = 100 C | β | 36 A (Tc, estimated) |
| Continuous Drain Current (Id) @ TA = 25 C | β | 60 A (Ta, datasheet) |
| On-Resistance Rds(on) max @ VGS = 10 V | β | 32 mOhm |
| Gate Threshold Voltage (VGS(th)) | β | 2.0 V to 4.0 V (typical 3 V) |
| Gate-to-Drain Charge (Qgd) | β | [DATA_NEEDED: Qgd in nC] |
| Power Dissipation (Pd) @ TC = 25 C | β | 230 W (Tc) |
| Power Dissipation (Pd) @ TA = 25 C | β | 3.8 W (Ta) |
| Thermal Resistance Junction-to-Case (RthJC) | β | [DATA_NEEDED: RthJC in C/W] |
| Thermal Resistance Junction-to-Ambient (RthJA) | β | [DATA_NEEDED: RthJA in C/W] |
| Operating Temperature Range | β | -55 C to +175 C (junction) |
| Pin Count | β | 3 (Gate, Drain, Source) + tab |
| Lead-Free Finish | β | Yes (matte tin) |