IRFS52N15DPBF vs IRFS52N15DTRLP Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFS52N15DPBF sa pamamagitan ng Infineon at IRFS52N15DTRLP sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFS52N15DPBF | IRFS52N15DTRLP |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | N-Channel MOSFET |
| Technology | HEXFET (Planar Cell) | HEXFET (Planar) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) @ TC=25C | 51 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| RDS(on) max @ VGS=10V | 32 mOhm | — |
| Total Gate Charge (Qg) | 60 nC (typical) | [DATA_NEEDED: total gate charge in nC] |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | [DATA_NEEDED: Ciss in pF] |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| Power Dissipation (PD) @ TA=25C | 3.8 W | — |
| Power Dissipation (PD) @ TC=25C | 230 W | — |
| Temperature ng Junction na Operasyon | -55C to +175C | — |
| Packhaging | D2PAK (TO-263) Surface Mount | D2PAK (TO-263) surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Qualification Standard | JEDEC | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, typical for D2PAK) |
| Lead-Free | Yes | — |
| Tindminan RoHS | Compliant | Compliant |
| Drain-to-Source Voltage (Vdss) | — | 150 V |
| Continuous Drain Current (Id) @ TC = 25 C | — | 51 A (Tc) |
| Continuous Drain Current (Id) @ TC = 100 C | — | 36 A (Tc, estimated) |
| Continuous Drain Current (Id) @ TA = 25 C | — | 60 A (Ta, datasheet) |
| On-Resistance Rds(on) max @ VGS = 10 V | — | 32 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V (typical 3 V) |
| Gate-to-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd in nC] |
| Power Dissipation (Pd) @ TC = 25 C | — | 230 W (Tc) |
| Power Dissipation (Pd) @ TA = 25 C | — | 3.8 W (Ta) |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC in C/W] |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | [DATA_NEEDED: RthJA in C/W] |
| Hanay ng Temperature na Operasyon | — | -55 C to +175 C (junction) |
| Bilang ng Pin | — | 3 (Gate, Drain, Source) + tab |
| Lead-Free Finish | — | Yes (matte tin) |