IRFS52N15DPBF vs IRFS52N15DTRLP Vergleich
Detaillierter Direktvergleich von IRFS52N15DPBF von Infineon und IRFS52N15DTRLP von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFS52N15DPBF | IRFS52N15DTRLP |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,15 | $1,62 |
| FET Type | N-Channel | N-Channel MOSFET |
| Technology | HEXFET (Planar Cell) | HEXFET (Planar) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) @ TC=25C | 51 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| RDS(on) max @ VGS=10V | 32 mOhm | — |
| Total Gate Charge (Qg) | 60 nC (typical) | [DATA_NEEDED: total gate charge in nC] |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | [DATA_NEEDED: Ciss in pF] |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| Power Dissipation (PD) @ TA=25C | 3.8 W | — |
| Power Dissipation (PD) @ TC=25C | 230 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | — |
| Gehäuse | D2PAK (TO-263) Surface Mount | D2PAK (TO-263) surface mount |
| Montageart | Surface Mount | Surface Mount |
| Qualification Standard | JEDEC | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, typical for D2PAK) |
| Lead-Free | Yes | — |
| RoHS-Status | Compliant | Compliant |
| Drain-to-Source Voltage (Vdss) | — | 150 V |
| Continuous Drain Current (Id) @ TC = 25 C | — | 51 A (Tc) |
| Continuous Drain Current (Id) @ TC = 100 C | — | 36 A (Tc, estimated) |
| Continuous Drain Current (Id) @ TA = 25 C | — | 60 A (Ta, datasheet) |
| On-Resistance Rds(on) max @ VGS = 10 V | — | 32 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V (typical 3 V) |
| Gate-to-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd in nC] |
| Power Dissipation (Pd) @ TC = 25 C | — | 230 W (Tc) |
| Power Dissipation (Pd) @ TA = 25 C | — | 3.8 W (Ta) |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC in C/W] |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | [DATA_NEEDED: RthJA in C/W] |
| Betriebstemperaturbereich | — | -55 C to +175 C (junction) |
| Pin-Anzahl | — | 3 (Gate, Drain, Source) + tab |
| Lead-Free Finish | — | Yes (matte tin) |