IRFS52N15DPBF vs IRFS52N15DTRLP Сравнение
Подробное сравнение бок о бок IRFS52N15DPBF от Infineon и IRFS52N15DTRLP от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRFS52N15DPBF | IRFS52N15DTRLP |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,15 | $1,62 |
| FET Type | N-Channel | N-Channel MOSFET |
| Technology | HEXFET (Planar Cell) | HEXFET (Planar) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) @ TC=25C | 51 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| RDS(on) max @ VGS=10V | 32 mOhm | — |
| Total Gate Charge (Qg) | 60 nC (typical) | [DATA_NEEDED: total gate charge in nC] |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | [DATA_NEEDED: Ciss in pF] |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| Power Dissipation (PD) @ TA=25C | 3.8 W | — |
| Power Dissipation (PD) @ TC=25C | 230 W | — |
| Рабочая температура перехода | -55C to +175C | — |
| Корпус | D2PAK (TO-263) Surface Mount | D2PAK (TO-263) surface mount |
| Тип монтажа | Surface Mount | Surface Mount |
| Qualification Standard | JEDEC | — |
| Уровень MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, typical for D2PAK) |
| Lead-Free | Yes | — |
| Статус RoHS | Compliant | Compliant |
| Drain-to-Source Voltage (Vdss) | — | 150 V |
| Continuous Drain Current (Id) @ TC = 25 C | — | 51 A (Tc) |
| Continuous Drain Current (Id) @ TC = 100 C | — | 36 A (Tc, estimated) |
| Continuous Drain Current (Id) @ TA = 25 C | — | 60 A (Ta, datasheet) |
| On-Resistance Rds(on) max @ VGS = 10 V | — | 32 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V (typical 3 V) |
| Gate-to-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd in nC] |
| Power Dissipation (Pd) @ TC = 25 C | — | 230 W (Tc) |
| Power Dissipation (Pd) @ TA = 25 C | — | 3.8 W (Ta) |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC in C/W] |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | [DATA_NEEDED: RthJA in C/W] |
| Диапазон рабочих температур | — | -55 C to +175 C (junction) |
| Число выводов | — | 3 (Gate, Drain, Source) + tab |
| Lead-Free Finish | — | Yes (matte tin) |