IRLL024NTRPBF vs IRF8714TRPBF Comparison
Detailed side-by-side comparison of IRLL024NTRPBF by Infineon and IRF8714TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLL024NTRPBF | IRF8714TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.22 | $0.66 |
| Polarity | N-Channel | β |
| FET Type | MOSFET, Metal Oxide | N-Channel |
| Operating Mode | Enhancement Mode | β |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 55 V | β |
| Continuous Drain Current (ID) at Ta | 3.1 A | β |
| Pulsed Drain Current (IDM) | 4.4 A | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | 0.065 ohm | β |
| Total Gate Charge (Qg) | 10.4 nC | β |
| Gate Threshold Voltage (VGS(th)) | Logic Level (5 V drive capable) | [DATA_NEEDED: VGS(th) typical range] |
| Maximum Power Dissipation (Pd) at Ta | 1.0 W | β |
| Maximum Operating Junction Temperature | 175 C | β |
| Package | SOT-223 (4-pin) | SO-8 (8-SOIC) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | HEXFET / StrongIRFET (planar MOSFET) |
| RoHS Status | Compliant | β |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at TA=25C | β | 14 A |
| On-State Resistance (RDS(on)) max at VGS=10V | β | 8.7 mΞ© |
| Gate Charge (Qg) typical | β | 8.1 nC |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Power Dissipation (PD) at TA=25C | β | 2.5 W |
| Operating Temperature Range | β | -55C to +150C (junction) |
| Pin Count | β | 8 |
| Avalanche Rated | β | Yes |
| Lead-Free / RoHS | β | Lead-Free / RoHS Compliant |
| MSL Level | β | 1 (per Infineon package qualification) |