IRLL024NTRPBF vs IRF8714TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLL024NTRPBF sa pamamagitan ng Infineon at IRF8714TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLL024NTRPBF | IRF8714TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | N-Channel | — |
| FET Type | MOSFET, Metal Oxide | N-Channel |
| Operating Mode | Enhancement Mode | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 55 V | — |
| Continuous Drain Current (ID) at Ta | 3.1 A | — |
| Pulsed Drain Current (IDM) | 4.4 A | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | 0.065 ohm | — |
| Total Gate Charge (Qg) | 10.4 nC | — |
| Gate Threshold Voltage (VGS(th)) | Logic Level (5 V drive capable) | [DATA_NEEDED: VGS(th) typical range] |
| Maximum Power Dissipation (Pd) at Ta | 1.0 W | — |
| Maximum Operating Junction Temperature | 175 C | — |
| Packhaging | SOT-223 (4-pin) | SO-8 (8-SOIC) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | HEXFET / StrongIRFET (planar MOSFET) |
| Tindminan RoHS | Compliant | — |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 14 A |
| On-State Resistance (RDS(on)) max at VGS=10V | — | 8.7 mΩ |
| Gate Charge (Qg) typical | — | 8.1 nC |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Hanay ng Temperature na Operasyon | — | -55C to +150C (junction) |
| Bilang ng Pin | — | 8 |
| Avalanche Rated | — | Yes |
| Lead-Free / RoHS | — | Lead-Free / RoHS Compliant |
| Level ng MSL | — | 1 (per Infineon package qualification) |