IRLL024NTRPBF vs IRF8714TRPBF Perbandingan
Perbandingan bersamaan detil IRLL024NTRPBF dari Infineon dan IRF8714TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLL024NTRPBF | IRF8714TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| FET Type | MOSFET, Metal Oxide | N-Channel |
| Operating Mode | Enhancement Mode | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 55 V | — |
| Continuous Drain Current (ID) at Ta | 3.1 A | — |
| Pulsed Drain Current (IDM) | 4.4 A | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | 0.065 ohm | — |
| Total Gate Charge (Qg) | 10.4 nC | — |
| Gate Threshold Voltage (VGS(th)) | Logic Level (5 V drive capable) | [DATA_NEEDED: VGS(th) typical range] |
| Maximum Power Dissipation (Pd) at Ta | 1.0 W | — |
| Maximum Operating Junction Temperature | 175 C | — |
| Paket | SOT-223 (4-pin) | SO-8 (8-SOIC) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | HEXFET / StrongIRFET (planar MOSFET) |
| Status RoHS | Compliant | — |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 14 A |
| On-State Resistance (RDS(on)) max at VGS=10V | — | 8.7 mΩ |
| Gate Charge (Qg) typical | — | 8.1 nC |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Rentang Suhu Kerja | — | -55C to +150C (junction) |
| Jumlah Pin | — | 8 |
| Avalanche Rated | — | Yes |
| Lead-Free / RoHS | — | Lead-Free / RoHS Compliant |
| Level MSL | — | 1 (per Infineon package qualification) |