IRLL024NTRPBF vs IRF8714TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLL024NTRPBF disebabkan oleh Infineon dan IRF8714TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLL024NTRPBF | IRF8714TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| FET Type | MOSFET, Metal Oxide | N-Channel |
| Operating Mode | Enhancement Mode | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 55 V | — |
| Continuous Drain Current (ID) at Ta | 3.1 A | — |
| Pulsed Drain Current (IDM) | 4.4 A | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | 0.065 ohm | — |
| Total Gate Charge (Qg) | 10.4 nC | — |
| Gate Threshold Voltage (VGS(th)) | Logic Level (5 V drive capable) | [DATA_NEEDED: VGS(th) typical range] |
| Maximum Power Dissipation (Pd) at Ta | 1.0 W | — |
| Maximum Operating Junction Temperature | 175 C | — |
| Kemasan | SOT-223 (4-pin) | SO-8 (8-SOIC) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | HEXFET / StrongIRFET (planar MOSFET) |
| Status RoHS | Compliant | — |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 14 A |
| On-State Resistance (RDS(on)) max at VGS=10V | — | 8.7 mΩ |
| Gate Charge (Qg) typical | — | 8.1 nC |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Gambaran Suhu Operasi | — | -55C to +150C (junction) |
| Kiraan Pin | — | 8 |
| Avalanche Rated | — | Yes |
| Lead-Free / RoHS | — | Lead-Free / RoHS Compliant |
| Aras MSL | — | 1 (per Infineon package qualification) |