IRLL024ZTRPBF vs BSP125H6327XTSA1 Comparison
Detailed side-by-side comparison of IRLL024ZTRPBF by Infineon and BSP125H6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLL024ZTRPBF | BSP125H6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.38 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Technology | HEXFET Power MOSFET (trench-gate) | SIPMOS (Small Signal Power MOSFET) |
| FET Type | N-Channel enhancement-mode | β |
| Drain-Source Voltage (VDS) max | 55 V | β |
| Gate-Source Voltage (VGS) max | Β±16 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 5 A | β |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 60 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) typical | 7 nC | β |
| Power Dissipation (PD) at TA=25Β°C | 1 W | β |
| Operating Junction Temperature (TJ) | -55 Β°C to +150 Β°C | β |
| Package | SOT-223 (TO-261-4) | PG-SOT223-4 (SOT-223-3 + tab) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited floor life) | 1 (Unlimited) |
| RoHS Status | Compliant | Compliant |
| Part Number | β | BSP125H6327XTSA1 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 600 V |
| Continuous Drain Current (ID) | β | 120 mA (Ta) |
| Power Dissipation (PD) | β | 1.8 W (Ta) |
| Operating Temperature | β | -55C to +150C (TJ) |
| On-Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Configuration | β | Single |
| Channel Mode | β | Enhancement |
| Qualification | β | Automotive / Industrial grade |