IRLL024ZTRPBF vs BSP125H6327XTSA1 Vergleich
Detaillierter Direktvergleich von IRLL024ZTRPBF von Infineon und BSP125H6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLL024ZTRPBF | BSP125H6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,46 | $0,38 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Technology | HEXFET Power MOSFET (trench-gate) | SIPMOS (Small Signal Power MOSFET) |
| FET Type | N-Channel enhancement-mode | — |
| Drain-Source Voltage (VDS) max | 55 V | — |
| Gate-Source Voltage (VGS) max | ±16 V | — |
| Continuous Drain Current (ID) at TC=25°C | 5 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 60 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) typical | 7 nC | — |
| Power Dissipation (PD) at TA=25°C | 1 W | — |
| Operating Junction Temperature (TJ) | -55 °C to +150 °C | — |
| Gehäuse | SOT-223 (TO-261-4) | PG-SOT223-4 (SOT-223-3 + tab) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (unlimited floor life) | 1 (Unlimited) |
| RoHS-Status | Compliant | Compliant |
| Part Number | — | BSP125H6327XTSA1 |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) | — | 120 mA (Ta) |
| Power Dissipation (PD) | — | 1.8 W (Ta) |
| Betriebstemperatur | — | -55C to +150C (TJ) |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Configuration | — | Single |
| Channel Mode | — | Enhancement |
| Qualification | — | Automotive / Industrial grade |