IRLL024ZTRPBF vs BSP125H6327XTSA1 Сравнение
Подробное сравнение бок о бок IRLL024ZTRPBF от Infineon и BSP125H6327XTSA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRLL024ZTRPBF | BSP125H6327XTSA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,46 | $0,38 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Technology | HEXFET Power MOSFET (trench-gate) | SIPMOS (Small Signal Power MOSFET) |
| FET Type | N-Channel enhancement-mode | — |
| Drain-Source Voltage (VDS) max | 55 V | — |
| Gate-Source Voltage (VGS) max | ±16 V | — |
| Continuous Drain Current (ID) at TC=25°C | 5 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 60 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) typical | 7 nC | — |
| Power Dissipation (PD) at TA=25°C | 1 W | — |
| Operating Junction Temperature (TJ) | -55 °C to +150 °C | — |
| Корпус | SOT-223 (TO-261-4) | PG-SOT223-4 (SOT-223-3 + tab) |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | 1 (unlimited floor life) | 1 (Unlimited) |
| Статус RoHS | Compliant | Compliant |
| Part Number | — | BSP125H6327XTSA1 |
| Тип транзистора | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) | — | 120 mA (Ta) |
| Power Dissipation (PD) | — | 1.8 W (Ta) |
| Рабочая температура | — | -55C to +150C (TJ) |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Configuration | — | Single |
| Channel Mode | — | Enhancement |
| Qualification | — | Automotive / Industrial grade |