IRLR2905TRPBF vs IRFR3607TRPBF Comparison

Detailed side-by-side comparison of IRLR2905TRPBF by Infineon and IRFR3607TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLR2905TRPBF IRLR2905TRPBF - 55V 42A N-Channel HEXFET MOSFET | Infineon

IRLR2905TRPBF - 55V 42A N-Channel HEXFET MOSFET | Infineon

IRLR2905TRPBF βœ“ Active

Specification Comparison

Parameter IRLR2905TRPBF IRFR3607TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.61 $0.39
FET Type N-Channel MOSFET β€”
Technology HEXFET (IR MOSFET, fifth generation) IR HEXFET (planar DMOS)
Drain-to-Source Voltage (VDS) 55 V 75 V
Continuous Drain Current (ID) at Tc=25C 42 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] β€”
On-Resistance RDS(on) max @ VGS=10V 27 mOhm β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] 4 V
Gate Charge (Qg) 32 nC β€”
Power Dissipation (PD) at Tc=25C 110 W β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Avalanche Rated Yes β€”
Lead-Free / RoHS Yes / Compliant β€”
MSL Level [DATA_NEEDED: MSL rating] β€”
Gate Drive Logic-level compatible β€”
Polarity / Channel Type β€” N-Channel
Continuous Drain Current (ID, Tc) β€” 56 A
Calculated Die Drain Current β€” 80 A
On-State Resistance (RDS(on)) β€” 9 mOhm @ VGS=10V, ID=46A
Total Gate Charge (Qg) β€” 56 nC
Gate-to-Source Voltage (VGS) Max β€” +/-20 V
Power Dissipation (PD, Tc) β€” 140 W
Thermal Resistance (RthJC) β€” 1.0 C/W
Operating Temperature Range β€” -55C to +175C (TJ max 175C per datasheet convention)
Avalanche SOA β€” Fully characterized
RoHS / Lead-Free β€” Compliant / Pb-free (PBF suffix, JESD-609 e3)

Datasheets & Resources

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