IRLR2905TRPBF vs IRFR3607TRPBF 比較

詳細並排比較 IRLR2905TRPBF 由 Infineon 與 IRFR3607TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRLR2905TRPBF IRLR2905TRPBF - 55V 42A N-Channel HEXFET MOSFET | Infineon

IRLR2905TRPBF - 55V 42A N-Channel HEXFET MOSFET | Infineon

IRLR2905TRPBF ✓ 啟用中

規格比較

參數 IRLR2905TRPBF IRFR3607TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel MOSFET —
Technology HEXFET (IR MOSFET, fifth generation) IR HEXFET (planar DMOS)
Drain-to-Source Voltage (VDS) 55 V 75 V
Continuous Drain Current (ID) at Tc=25C 42 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) max @ VGS=10V 27 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] 4 V
Gate Charge (Qg) 32 nC —
Power Dissipation (PD) at Tc=25C 110 W —
工作接面溫度 -55C to +175C —
封裝 TO-252AA (DPAK), surface mount TO-252AA (DPAK)
安裝類型 Surface Mount Surface Mount
Avalanche Rated Yes —
Lead-Free / RoHS Yes / Compliant —
MSL 等級 [DATA_NEEDED: MSL rating] —
Gate Drive Logic-level compatible —
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID, Tc) — 56 A
Calculated Die Drain Current — 80 A
On-State Resistance (RDS(on)) — 9 mOhm @ VGS=10V, ID=46A
Total Gate Charge (Qg) — 56 nC
Gate-to-Source Voltage (VGS) Max — +/-20 V
Power Dissipation (PD, Tc) — 140 W
Thermal Resistance (RthJC) — 1.0 C/W
工作溫度範圍 — -55C to +175C (TJ max 175C per datasheet convention)
Avalanche SOA — Fully characterized
RoHS / Lead-Free — Compliant / Pb-free (PBF suffix, JESD-609 e3)

資料表與資源

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