IRLR3410TRPBF vs IRF7832TRPBF Comparison
Detailed side-by-side comparison of IRLR3410TRPBF by Infineon and IRF7832TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLR3410TRPBF | IRF7832TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.81 | $0.92 |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (IR MOSFET, 5th generation) | HEXFET (trench MOSFET) |
| Drain-Source Voltage (Vdss) | 100 V | β |
| Continuous Drain Current (Id) at Tc=25C | 17 A | β |
| Power Dissipation (Pd) at Tc=25C | 79 W | β |
| On-Resistance RDS(on) max | 105 mOhm | β |
| Gate Threshold Voltage Vgs(th) | Logic-level (drive ~4.5V) | β |
| Total Gate Charge (Qg) | 22.7 nC | β |
| Package | TO-252AA (DPAK), surface mount | 8-SO (SOIC-8) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) | -55 C to +150 C (TJ) |
| Lead-Free / RoHS | Yes (PBF suffix) | β |
| MSL Level | 1 (unlimited floor life at <30C/85% RH) | 1 (per JEDEC J-STD-020) |
| Drain Tab Connection | Tab electrically tied to Drain | β |
| Polarity | N-Channel enhancement mode | β |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Part Number | β | IRF7832TRPBF |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at TA=25C | β | 20 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | β | 4.0 mOhm |
| Gate-Source Voltage (VGS) max | β | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) typical | β | 1.0 V to 2.5 V |
| Total Gate Charge (Qg) typical | β | 34 nC |
| Power Dissipation (PD) at TA=25C | β | 2.5 W |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |